Photoelectric conversion element and imaging device
    1.
    发明授权
    Photoelectric conversion element and imaging device 有权
    光电转换元件和成像装置

    公开(公告)号:US09258463B2

    公开(公告)日:2016-02-09

    申请号:US14222413

    申请日:2014-03-21

    Abstract: The solid-state imaging device includes lower electrodes acting as pixel electrodes, an organic photoelectric conversion film formed on the lower electrodes and generating electric charge in response to received light, and a transparent upper electrode that are formed on a substrate having signal readout circuits. The organic photoelectric conversion film, a transition area having at least one of its film thickness and film quality undergone transition from a film thickness and film quality of an area corresponding to a pixel electrode area in which the lower electrodes have been formed is an area that starts from an outer edge of the organic photoelectric conversion film and ends at a point away from the outer edge by a distance of 200 μm or less.

    Abstract translation: 固态成像装置包括用作像素电极的下电极,形成在下电极上的有机光电转换膜并响应于接收的光产生电荷,以及形成在具有信号读出电路的基板上的透明上电极。 有机光电转换膜,其膜厚度和膜质量中的至少一个的过渡区域从膜厚度和与形成有下部电极的像素电极区域对应的区域的膜质量转变为具有以下区域: 从有机光电转换膜的外边缘开始,并且在远离外边缘的位置处终止200μm以下的距离。

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