专利检索 ap:("FUJIFILM Corporation" OR "FUJIFILM Electronic Materials U.S.A., Inc.") AND inv:"Carl BALLESTEROS" 第 1 页

1.

发明公开
SEMICONDUCTOR ETCHING SOLUTION 审中-公开

公开(公告)号：US20240166948A1

公开(公告)日：2024-05-23

申请号：US18408579

申请日：2024-01-10

申请人： FUJIFILM Corporation , FUJIFILM Electronic Materials U.S.A., Inc.

发明人： Atsushi MIZUTANI , Mick BJELOPAVLIC , Carl BALLESTEROS

IPC分类号： C09K13/08 , H01L21/306

CPC分类号： C09K13/08 , H01L21/30604

摘要： Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.