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1.发明申请SEMICONDUCTOR DEVICE HAVING INSULATING LAYERS CONTAINING OXYGEN AND A BARRIER LAYER CONTAINING MANGANESE 审中-公开含有氧的绝缘层和包含锰的阻隔层的半导体器件公开(公告)号：US20140353829A1
公开(公告)日：2014-12-04
申请号：US14459433
申请日：2014-08-14
IPC分类号： H01L23/532 , H01L21/768 , H01L23/522
CPC分类号： H01L21/76807 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L21/76879 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2224/05149 , H01L2224/05649 , H01L2224/29149 , H01L2224/29649 , H01L2224/80449 , H01L2224/81449 , H01L2224/83449 , H01L2224/84449 , H01L2224/85449 , H01L2924/0002 , H01L2924/01025 , H01L2924/00
摘要： A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.
摘要翻译： 半导体器件包括形成在半导体衬底上的绝缘层，所述绝缘层包括氧，形成在所述绝缘层中的第一线，以及形成在所述第一线上的绝缘层中并且含有锰，氧和铜的第二线， 所述第二线具有形成在所述绝缘层中并且向下延伸但与所述第一线间隔开的突出部分。
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2.发明申请公开(公告)号：US20170047246A1
公开(公告)日：2017-02-16
申请号：US15336565
申请日：2016-10-27
IPC分类号： H01L21/768
CPC分类号： H01L21/76807 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L21/76879 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2224/05149 , H01L2224/05649 , H01L2224/29149 , H01L2224/29649 , H01L2224/80449 , H01L2224/81449 , H01L2224/83449 , H01L2224/84449 , H01L2224/85449 , H01L2924/0002 , H01L2924/01025 , H01L2924/00
摘要： A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.
摘要翻译： 半导体器件包括形成在半导体衬底上的绝缘层，所述绝缘层包括氧，形成在所述绝缘层中的第一线，以及形成在所述第一线上的绝缘层中并且含有锰，氧和铜的第二线， 所述第二线具有形成在所述绝缘层中并且向下延伸但与所述第一线间隔开的突出部分。
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