摘要:
Bonded structures and method of forming the same are provided. A conductive layer is formed on a first surface of a bonded structure, the bonded structure including a first substrate bonded to a second substrate, the first surface of the bonded structure being an exposed surface of the first substrate. A patterned mask having first openings and second openings is formed on the conductive layer, the first openings and the second openings exposing portions of the conductive layer. First portions of first bonding connectors are formed in the first openings and first portions of second bonding connectors are formed in the second openings. The conductive layer is patterned to form second portions of the first bonding connectors and second portions of the second bonding connectors. The bonded structure is bonded to a third substrate using the first bonding connectors and the second bonding connectors.
摘要:
A power semiconductor device may comprise: a lower structure; a solder layer on the lower structure; a semiconductor structure on the solder layer; a contact layer on the semiconductor structure; a pad layer on the contact layer; and/or a wire between the pad layer and the lower structure. The solder layer may be electrically connected to a first electrode of the semiconductor structure.
摘要:
According to one embodiment, a semiconductor substrate, a redistribution trace, and a surface layer are provided, with the surface layer provided on the redistribution trace. On the semiconductor substrate, a wire and a pad electrode are formed. The redistribution trace is formed on the semiconductor substrate. The surface layer is larger in width than the redistribution trace, and extends beyond the edge of the redistribution trace.
摘要:
A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.
摘要:
Bonded structures and method of forming the same are provided. A conductive layer is formed on a first surface of a bonded structure, the bonded structure including a first substrate bonded to a second substrate, the first surface of the bonded structure being an exposed surface of the first substrate. A patterned mask having first openings and second openings is formed on the conductive layer, the first openings and the second openings exposing portions of the conductive layer. First portions of first bonding connectors are formed in the first openings and first portions of second bonding connectors are formed in the second openings. The conductive layer is patterned to form second portions of the first bonding connectors and second portions of the second bonding connectors. The bonded structure is bonded to a third substrate using the first bonding connectors and the second bonding connectors.
摘要:
A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.
摘要:
A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.
摘要:
A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.
摘要:
The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.
摘要:
A copper-manganese bonding structure adopted for use on Under Bump Metallurgy (UBM) at solder joints in packaging technology includes an electronic element, at least one soldering material and at least one manganese bonding material. The electronic element has at least one copper conductive portion. The soldering material corresponds to the copper conductive portion. The manganese bonding material is arranged in the copper conductive portion and the soldering material to form bonding between them. The manganese bonding material can reduce the generation of a brittle intermetallic compound Cu3Sn and suppress the generation of voids. The copper conductive portion is not consumed by the generation of the intermetallic compound. Thus the total structure can be protected and improved.