公开(公告)号：US09613926B2

公开(公告)日：2017-04-04

申请号：US14712729

申请日：2015-05-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Ming-Fa Chen ,  Wen-Ching Tsai

IPC分类号： H01L23/00 ,  B81C3/00 ,  H01L23/10 ,  H01L21/50

CPC分类号： H01L24/81 ,  B81C1/00238 ,  B81C3/001 ,  B81C2203/031 ,  B81C2203/035 ,  H01L21/50 ,  H01L23/10 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/80 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03602 ,  H01L2224/03614 ,  H01L2224/03616 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05149 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/06051 ,  H01L2224/08225 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/119 ,  H01L2224/11912 ,  H01L2224/13012 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13149 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/16014 ,  H01L2224/16147 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/2747 ,  H01L2224/27614 ,  H01L2224/279 ,  H01L2224/27912 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29014 ,  H01L2224/29082 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/32014 ,  H01L2224/32147 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/80805 ,  H01L2224/80893 ,  H01L2224/80894 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/8383 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/10158 ,  H01L2924/1461 ,  H01L2924/163 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2924/00012 ,  H01L2224/0347 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/114 ,  H01L2224/1146 ,  H01L2224/1161 ,  H01L2224/274 ,  H01L2224/2746 ,  H01L2224/2761 ,  H01L21/302 ,  H01L2224/034 ,  H01L2224/0361 ,  H01L2224/80

摘要： Bonded structures and method of forming the same are provided. A conductive layer is formed on a first surface of a bonded structure, the bonded structure including a first substrate bonded to a second substrate, the first surface of the bonded structure being an exposed surface of the first substrate. A patterned mask having first openings and second openings is formed on the conductive layer, the first openings and the second openings exposing portions of the conductive layer. First portions of first bonding connectors are formed in the first openings and first portions of second bonding connectors are formed in the second openings. The conductive layer is patterned to form second portions of the first bonding connectors and second portions of the second bonding connectors. The bonded structure is bonded to a third substrate using the first bonding connectors and the second bonding connectors.

公开(公告)号：US09087833B2

公开(公告)日：2015-07-21

申请号：US14093126

申请日：2013-11-29

申请人： Samsung Electronics Co., Ltd.

发明人： Baik-woo Lee ,  Seong-woon Booh

IPC分类号： H01L29/45 ,  H01L29/78 ,  H01L29/739 ,  H01L23/498 ,  H01L23/373 ,  H01L23/00 ,  H01L25/07 ,  H01L25/18 ,  H01L29/20

CPC分类号： H01L23/49844 ,  H01L23/3735 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/072 ,  H01L25/18 ,  H01L29/2003 ,  H01L29/7393 ,  H01L2224/03436 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05109 ,  H01L2224/05111 ,  H01L2224/05113 ,  H01L2224/05116 ,  H01L2224/05117 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05138 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05149 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05163 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0517 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05183 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/0603 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2224/83203 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2224/85801 ,  H01L2224/8584 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/13033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01072 ,  H01L2924/01052 ,  H01L2924/014 ,  H01L2224/83205

摘要： A power semiconductor device may comprise: a lower structure; a solder layer on the lower structure; a semiconductor structure on the solder layer; a contact layer on the semiconductor structure; a pad layer on the contact layer; and/or a wire between the pad layer and the lower structure. The solder layer may be electrically connected to a first electrode of the semiconductor structure.

摘要翻译： 功率半导体器件可以包括：下部结构; 下部结构上的焊料层; 焊料层上的半导体结构; 半导体结构上的接触层; 接触层上的垫层; 和/或垫层和下部结构之间的线。 焊料层可以电连接到半导体结构的第一电极。

公开(公告)号：US20160190089A1

公开(公告)日：2016-06-30

申请号：US14712729

申请日：2015-05-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Ming-Fa Chen ,  Wen-Ching Tsai

IPC分类号： H01L23/00

CPC分类号： H01L24/81 ,  B81C1/00238 ,  B81C3/001 ,  B81C2203/031 ,  B81C2203/035 ,  H01L21/50 ,  H01L23/10 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/80 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03602 ,  H01L2224/03614 ,  H01L2224/03616 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05149 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/06051 ,  H01L2224/08225 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/119 ,  H01L2224/11912 ,  H01L2224/13012 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13149 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/16014 ,  H01L2224/16147 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/2747 ,  H01L2224/27614 ,  H01L2224/279 ,  H01L2224/27912 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29014 ,  H01L2224/29082 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/32014 ,  H01L2224/32147 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/80805 ,  H01L2224/80893 ,  H01L2224/80894 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/8383 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/10158 ,  H01L2924/1461 ,  H01L2924/163 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2924/00012 ,  H01L2224/0347 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/114 ,  H01L2224/1146 ,  H01L2224/1161 ,  H01L2224/274 ,  H01L2224/2746 ,  H01L2224/2761 ,  H01L21/302 ,  H01L2224/034 ,  H01L2224/0361 ,  H01L2224/80

摘要： Bonded structures and method of forming the same are provided. A conductive layer is formed on a first surface of a bonded structure, the bonded structure including a first substrate bonded to a second substrate, the first surface of the bonded structure being an exposed surface of the first substrate. A patterned mask having first openings and second openings is formed on the conductive layer, the first openings and the second openings exposing portions of the conductive layer. First portions of first bonding connectors are formed in the first openings and first portions of second bonding connectors are formed in the second openings. The conductive layer is patterned to form second portions of the first bonding connectors and second portions of the second bonding connectors. The bonded structure is bonded to a third substrate using the first bonding connectors and the second bonding connectors.

摘要翻译： 提供了粘合结构及其形成方法。 导电层形成在接合结构的第一表面上，接合结构包括与第二基底结合的第一基底，接合结构的第一表面是第一基底的暴露表面。 具有第一开口和第二开口的图案化掩模形成在导电层上，第一开口和第二开口露出导电层的部分。 第一接合连接器的第一部分形成在第一开口中，第二接合连接器的第一部分形成在第二开口中。 图案化导电层以形成第一接合连接器的第二部分和第二接合连接器的第二部分。 使用第一接合连接器和第二接合连接器将接合结构接合到第三基板。

公开(公告)号：US20140353829A1

公开(公告)日：2014-12-04

申请号：US14459433

申请日：2014-08-14

申请人： FUJITSU SEMICONDUCTOR LIMITED

发明人： Hirosato OCHIMIZU ,  Atsuhiro TSUKUNE ,  Hiroshi KUDO

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/76807 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2224/05149 ,  H01L2224/05649 ,  H01L2224/29149 ,  H01L2224/29649 ,  H01L2224/80449 ,  H01L2224/81449 ,  H01L2224/83449 ,  H01L2224/84449 ,  H01L2224/85449 ,  H01L2924/0002 ,  H01L2924/01025 ,  H01L2924/00

摘要： A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.

摘要翻译： 半导体器件包括形成在半导体衬底上的绝缘层，所述绝缘层包括氧，形成在所述绝缘层中的第一线，以及形成在所述第一线上的绝缘层中并且含有锰，氧和铜的第二线， 所述第二线具有形成在所述绝缘层中并且向下延伸但与所述第一线间隔开的突出部分。

公开(公告)号：US09704740B2

公开(公告)日：2017-07-11

申请号：US15336565

申请日：2016-10-27

申请人： FUJITSU SEMICONDUCTOR LIMITED

发明人： Hirosato Ochimizu ,  Atsuhiro Tsukune ,  Hiroshi Kudo

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522

CPC分类号： H01L21/76807 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2224/05149 ,  H01L2224/05649 ,  H01L2224/29149 ,  H01L2224/29649 ,  H01L2224/80449 ,  H01L2224/81449 ,  H01L2224/83449 ,  H01L2224/84449 ,  H01L2224/85449 ,  H01L2924/0002 ,  H01L2924/01025 ,  H01L2924/00

摘要： A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.

公开(公告)号：US20170047246A1

公开(公告)日：2017-02-16

申请号：US15336565

申请日：2016-10-27

申请人： FUJITSU SEMICONDUCTOR LIMITED

发明人： Hirosato OCHIMIZU ,  Atsuhiro TSUKUNE ,  Hiroshi KUDO

IPC分类号： H01L21/768

CPC分类号： H01L21/76807 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2224/05149 ,  H01L2224/05649 ,  H01L2224/29149 ,  H01L2224/29649 ,  H01L2224/80449 ,  H01L2224/81449 ,  H01L2224/83449 ,  H01L2224/84449 ,  H01L2224/85449 ,  H01L2924/0002 ,  H01L2924/01025 ,  H01L2924/00

摘要： A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.

摘要翻译： 半导体器件包括形成在半导体衬底上的绝缘层，所述绝缘层包括氧，形成在所述绝缘层中的第一线，以及形成在所述第一线上的绝缘层中并且含有锰，氧和铜的第二线， 所述第二线具有形成在所述绝缘层中并且向下延伸但与所述第一线间隔开的突出部分。

公开(公告)号：US20150247244A1

公开(公告)日：2015-09-03

申请号：US14634535

申请日：2015-02-27

申请人： IMEC VZW ,  GLOBALFOUNDRIES INC.

发明人： Eric Beyne ,  Joeri De Vos ,  Jaber Derakhshandeh ,  Luke England ,  George Vakanas

IPC分类号： C23C30/00

CPC分类号： C23C30/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/85 ,  H01L2224/031 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05147 ,  H01L2224/05149 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/0518 ,  H01L2224/05563 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/13101 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13144 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48655 ,  H01L2224/48657 ,  H01L2224/48755 ,  H01L2224/48757 ,  H01L2224/48855 ,  H01L2224/48857 ,  H01L2224/81203 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85355 ,  H01L2224/85375 ,  H01L2224/85455 ,  H01L2224/85457 ,  Y10T428/12826 ,  Y10T428/12861 ,  Y10T428/12882 ,  Y10T428/1291 ,  Y10T428/12931 ,  Y10T428/12944 ,  Y10T428/24917 ,  H01L2924/01005 ,  H01L2924/00014 ,  H01L2924/014

摘要： The invention relates to a substrate having at least one main surface comprising at least one non-noble metallic bonding landing pad covered by a capping layer thereby shielding the non-noble metallic bonding landing pad from the environment. This capping layer comprises an alloy, the alloy being NiB or CoB and containing an atomic concentration percentage of boron in the range of 10% to 50%.

摘要翻译： 本发明涉及一种具有至少一个主表面的基底，该至少一个主表面包括由覆盖层覆盖的至少一个非贵金属粘结着陆垫，从而将非贵金属粘合着陆垫与环境隔离。 该覆盖层包括合金，该合金为NiB或CoB，并且含有10％至5​​0％范围内的硼的原子浓度百分比。

公开(公告)号：US20110281136A1

公开(公告)日：2011-11-17

申请号：US12780444

申请日：2010-05-14

申请人： Jenq-Gong Duh ,  Chien-Fu Tseng

发明人： Jenq-Gong Duh ,  Chien-Fu Tseng

IPC分类号： B32B15/20

CPC分类号： C22C13/00 ,  B23K35/302 ,  C22C9/05 ,  H01L21/563 ,  H01L23/49811 ,  H01L23/49866 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05149 ,  H01L2224/05573 ,  H01L2224/05649 ,  H01L2224/10145 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16503 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/3651 ,  Y10T428/12903 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： A copper-manganese bonding structure adopted for use on Under Bump Metallurgy (UBM) at solder joints in packaging technology includes an electronic element, at least one soldering material and at least one manganese bonding material. The electronic element has at least one copper conductive portion. The soldering material corresponds to the copper conductive portion. The manganese bonding material is arranged in the copper conductive portion and the soldering material to form bonding between them. The manganese bonding material can reduce the generation of a brittle intermetallic compound Cu3Sn and suppress the generation of voids. The copper conductive portion is not consumed by the generation of the intermetallic compound. Thus the total structure can be protected and improved.

摘要翻译： 在包装技术的焊接接头处采用的用于Under Bump Metallurgy（UBM）的铜锰结合结构包括电子元件，至少一种焊接材料和至少一种锰粘接材料。 电子元件具有至少一个铜导电部分。 焊接材料对应于铜导电部分。 锰接合材料布置在铜导电部分和焊接材料中以形成它们之间的结合。 锰键合材料可以减少脆性金属间化合物Cu 3 Sn的产生并抑制空隙的产生。 铜导电部分不会被金属间化合物的产生所消耗。 因此，可以保护和改进总体结构。

公开(公告)号：US12002777B2

公开(公告)日：2024-06-04

申请号：US17461550

申请日：2021-08-30

申请人： KIOXIA CORPORATION

发明人： Kotaro Fujii ,  Shinya Watanabe

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

CPC分类号： H01L24/08 ,  H01L24/05 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05149 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

摘要： According to one or more embodiments, a semiconductor device includes a first substrate and a second substrate. The first substrate includes a first metal layer and a first insulating layer. The first insulating layer surrounds the first metal layer. The second substrate includes a second metal layer, a second insulating layer, and a first conducive body. The second metal layer is in contact with the first metal layer. The second insulating layer surrounds the second metal layer and is in contact with the first insulating layer. A part of the first conductive body is in the second metal layer and extends in a first direction toward the first metal layer.

公开(公告)号：US11769747B2

公开(公告)日：2023-09-26

申请号：US17350473

申请日：2021-06-17

申请人： Kioxia Corporation

发明人： Genki Sawada ,  Masayoshi Tagami ,  Jun Iijima ,  Ippei Kume ,  Kiyomitsu Yoshida

IPC分类号： H01L23/00 ,  H01L25/18

CPC分类号： H01L24/32 ,  H01L24/05 ,  H01L24/09 ,  H01L24/83 ,  H01L25/18 ,  H01L24/29 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05149 ,  H01L2224/05166 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/09515 ,  H01L2224/29186 ,  H01L2224/32105 ,  H01L2224/32145 ,  H01L2224/32501 ,  H01L2224/83201 ,  H01L2224/83896 ,  H01L2224/83948

摘要： In one embodiment, a semiconductor device includes a first insulator. The device further includes a first pad provided in the first insulator, and including first and second layers provided on lateral and lower faces of the first insulator in order. The device further includes a second insulator provided on the first insulator. The device further includes a second pad provided on the first pad in the second insulator, and including third and fourth layers provided on lateral and upper faces of the second insulator in order. The device further includes a first portion provided between an upper face of the first pad and a lower face of the second insulator or between a lower face of the second pad and an upper face of the first insulator, and including a metal element same as a metal element included in the first layer or the third layer.