公开(公告)号：US11171032B2

公开(公告)日：2021-11-09

申请号：US16738158

申请日：2020-01-09

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Kazuki Mikami ,  Tomoaki Uchiyama ,  Akira Akutsu

IPC: H01L21/683 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/78 ,  H01L21/268 ,  C09J7/35 ,  C09J133/08

Abstract: After grinding is performed on a semiconductor wafer, the semiconductor wafer is fixed on the electrostatic chuck so as to cause the front surface side of the semiconductor wafer to face the electrostatic chuck. Next, a masking material layer is formed on the rear surface of the ground semiconductor wafer in a state where a surface protection tape is bonded thereto. Then, a masking tape is cut by irradiating, from the rear surface side, portions thereof corresponding to a plurality of streets appropriately formed in a grid shape in a pattern surface with a laser beam so as to form openings for the streets in the semiconductor wafer. Then, SF6 plasma irradiation is performed from the rear surface side so as to etch the semiconductor wafer that has been exposed in the street portions. Finally, ashing is performed using O2 plasma.