公开(公告)号：US20240388065A1

公开(公告)日：2024-11-21

申请号：US18785788

申请日：2024-07-26

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Kenichi MIYAJIMA ,  Kazuaki KIYOTA ,  Tatsuya KIMOTO ,  Akihiro IMAMURA ,  Koji HIRAIWA

IPC: H01S5/227 ,  H01S5/026 ,  H01S5/323

Abstract: An optical semiconductor device includes: a substrate having a (100) face as a surface; a first protrusion protruding from the substrate in a first direction and including a first mesa having a laminate structure in which a plurality of semiconductor layers are layered on the surface in the first direction, the first mesa including an active layer as one of the semiconductor layers; and a second protrusion protruding from the substrate in the first direction at a position distance from the first protrusion in a second direction intersecting with the first direction, and the second protrusion having a laminate structure in which a plurality of semiconductor layers are layered on the surface in the first direction. An end face in the first direction of the second protrusion has a substantially polygonal shape, and each side of the end face is non-parallel to a virtual line extending in [0-11] direction.

公开(公告)号：US20240380183A1

公开(公告)日：2024-11-14

申请号：US18784788

申请日：2024-07-25

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Kenichi MIYAJIMA ,  Kazuaki KIYOTA ,  Tatsuya KIMOTO ,  Akihiro IMAMURA ,  Koji HIRAIWA

IPC: H01S5/227 ,  H01S5/042

Abstract: An optical semiconductor device includes: a substrate; a first protrusion protruding from the substrate in a first direction and including a first mesa having a laminate structure in which a plurality of semiconductor layers are layered on the substrate in the first direction, the first mesa including an active layer as one of the semiconductor layers; and a second protrusion protruding from the substrate in the first direction at a distance from the first protrusion in a second direction intersecting with the first direction, the second protrusion having a same laminate structure as the laminate structure of the first mesa, wherein one of the plurality of semiconductor layers is exposed at an end portion of the second protrusion in the first direction.