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公开(公告)号：US20150103853A1
公开(公告)日：2015-04-16
申请号：US14552097
申请日：2014-11-24
Applicant: Furukawa Electric Co., Ltd.
Inventor： Tatsuro KUROBE , Tatsuya KIMOTO , Hideaki HASEGAWA
IPC: H01S5/024
CPC classification number: H01S5/024 , H01S3/1317 , H01S3/137 , H01S5/0085 , H01S5/02284 , H01S5/02407 , H01S5/02415 , H01S5/0612 , H01S5/06258 , H01S5/06837 , H01S5/0687 , H01S5/1014 , H01S5/12 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/4012 , H01S5/4031 , H01S5/50
Abstract: A semiconductor laser module includes: a semiconductor laser element having at least one semiconductor laser; a first support member on which the semiconductor laser element is mounted; a first temperature-adjusting element adjusting a temperature of the first support member; a semiconductor optical element having a semiconductor optical amplifier amplifying a laser light outputted from the semiconductor laser element; and a second support member on which the semiconductor optical element is mounted.
Abstract translation: 半导体激光器模块包括：具有至少一个半导体激光器的半导体激光元件; 安装半导体激光元件的第一支撑构件; 调节第一支撑构件的温度的第一温度调节元件; 半导体光学元件，具有放大从半导体激光元件输出的激光的半导体光放大器; 以及安装半导体光学元件的第二支撑构件。
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公开(公告)号：US20190187369A1
公开(公告)日：2019-06-20
申请号：US15929104
申请日：2019-02-08
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Kazuaki KIYOTA , Tatsuya KIMOTO , Yusuke SAITO
Abstract: A semiconductor optical integrated device includes: a substrate; at least a lower cladding layer, a waveguide core layer, and an upper cladding layer sequentially layered on the substrate, a buried hetero structure waveguide portion having a waveguide structure in which a semiconductor cladding material is embedded near each of both sides of the waveguide core layer; and a ridge waveguide portion having a waveguide structure in which a semiconductor layer including at least the upper cladding layer protrudes in a mesa shape. Further, a thickness of the upper cladding layer in the buried hetero structure waveguide portion is greater than a thickness of the upper cladding layer in the ridge waveguide portion.
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Patent Agency Ranking
3.发明公开公开(公告)号：US20240332884A1
公开(公告)日：2024-10-03
申请号：US18732956
申请日：2024-06-04
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Haruki OGOSHI , Junji YOSHIDA , Yusuke INABA , Tatsuya KIMOTO , Masaki FUNABASHI , Seiji ICHINO , Naoya HOJO , Shigehiro TAKASAKA , Ryuichi SUGIZAKI , Nitidet THUDSALINGKARNSAKUL , Sanguan ANANTATHANASARN
IPC: H01S3/10 , H01S3/067 , H01S3/0933 , H01S3/30
CPC classification number: H01S3/10084 , H01S3/06754 , H01S3/0933 , H01S3/302 , H01S2301/02
Abstract: A light source includes: a seed light source configured to output incoherent seed light having a predetermined bandwidth; and a booster amplifier that is a semiconductor optical amplifier configured to optically amplify the seed light entered through a first end facet and output the amplified light through a second end facet. The booster amplifier has nL being set, which is a product of a refractive index n and a chip length L, so as to simultaneously suppress relative intensity noise (RIN) and ripple in the amplified light.
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4.发明公开公开(公告)号：US20230231629A1
公开(公告)日：2023-07-20
申请号：US18180512
申请日：2023-03-08
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Haruki OGOSHI , Junji YOSHIDA , Yusuke INABA , Tatsuya KIMOTO , Masaki FUNABASHI , Seiji ICHINO , Naoya HOJO , Shigehiro TAKASAKA , Ryuichi SUGIZAKI , Nitidet THUDSALINGKARNSAKUL , Sanguan ANANTATHANASARN
IPC: H04B10/291 , H01S5/50
CPC classification number: H04B10/2916 , H01S5/5027 , H04B10/25
Abstract: A light source includes: a seed light source configured to output incoherent seed light with a predetermined bandwidth; and a booster amplifier that is a semiconductor optical amplifier configured to optically amplify the seed light input from a first facet, and output the amplified seed light as amplified light from a second facet, wherein the first facet and the second facet of the booster amplifier are subjected to a reflection reduction treatment, the booster amplifier is configured to operate in a gain saturated state, and relative intensity noise (RIN) and ripple are simultaneously suppressed in the amplified light.
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公开(公告)号：US20190302360A1
公开(公告)日：2019-10-03
申请号：US16446010
申请日：2019-06-19
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Yusuke SAITO , Tatsuro KUROBE , Tatsuya KIMOTO , Shinichi KAMIYA
Abstract: An optical integrated device includes a substrate a passive waveguide region and an active region. The active region and the passive waveguide region include a first mesa structure having an upper cladding portion formed of a same material as the upper cladding layer. The passive waveguide region includes a second spot size converter having the first mesa structure, a second mesa structure having a first core portion, a lower cladding portion, and a second core portion that are formed of same materials as the first core layer, the lower cladding layer, and the second core layer, respectively. The second mesa structure has a width wider than a width of the first mesa structure, and the width of the first mesa structure continuously changes along a longitudinal direction in which light is guided through the second core portion, the width being along a direction perpendicular to the longitudinal direction.
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公开(公告)号：US20240388065A1
公开(公告)日：2024-11-21
申请号：US18785788
申请日：2024-07-26
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Kenichi MIYAJIMA , Kazuaki KIYOTA , Tatsuya KIMOTO , Akihiro IMAMURA , Koji HIRAIWA
Abstract: An optical semiconductor device includes: a substrate having a (100) face as a surface; a first protrusion protruding from the substrate in a first direction and including a first mesa having a laminate structure in which a plurality of semiconductor layers are layered on the surface in the first direction, the first mesa including an active layer as one of the semiconductor layers; and a second protrusion protruding from the substrate in the first direction at a position distance from the first protrusion in a second direction intersecting with the first direction, and the second protrusion having a laminate structure in which a plurality of semiconductor layers are layered on the surface in the first direction. An end face in the first direction of the second protrusion has a substantially polygonal shape, and each side of the end face is non-parallel to a virtual line extending in [0-11] direction.
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公开(公告)号：US20240380183A1
公开(公告)日：2024-11-14
申请号：US18784788
申请日：2024-07-25
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Kenichi MIYAJIMA , Kazuaki KIYOTA , Tatsuya KIMOTO , Akihiro IMAMURA , Koji HIRAIWA
Abstract: An optical semiconductor device includes: a substrate; a first protrusion protruding from the substrate in a first direction and including a first mesa having a laminate structure in which a plurality of semiconductor layers are layered on the substrate in the first direction, the first mesa including an active layer as one of the semiconductor layers; and a second protrusion protruding from the substrate in the first direction at a distance from the first protrusion in a second direction intersecting with the first direction, the second protrusion having a same laminate structure as the laminate structure of the first mesa, wherein one of the plurality of semiconductor layers is exposed at an end portion of the second protrusion in the first direction.
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