公开(公告)号：US07144673B2

公开(公告)日：2006-12-05

申请号：US10971268

申请日：2004-10-21

申请人： Fei-Yun Chen ,  Jen-Shian Shieh ,  Hao-Chih Yuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

发明人： Fei-Yun Chen ,  Jen-Shian Shieh ,  Hao-Chih Yuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

IPC分类号： G03F7/30 ,  G03F7/42

CPC分类号： G03F7/423

摘要： The present subject matter relates to a method of stripping a photoresist after the photoresist film has been subjected to a high dose and high energy ion implant process. The method involves soaking the photoresist film in DI water, dry etching with oxygen plasma, and immersing in Caro's acid solution to improve the throughput of removing the film from the underlying substrate. The method can also be used to strip photoresist that has been hardened or altered by other types of processes such as dry etch transfer steps and chemical treatments. In some applications, the dry etching step may be omitted from the stripping process or the dry etching step may be combined with the water soak in an integrated process.

摘要翻译： 本主题涉及在光致抗蚀剂膜已经经受高剂量和高能量离子注入工艺之后剥离光致抗蚀剂的方法。 该方法包括将光致抗蚀剂膜浸入去离子水中，用氧等离子体进行干法蚀刻，并将其浸入Caro酸溶液中以提高从底层衬底去除膜的通过量。 该方法还可用于剥离已经通过其他类型的工艺如干蚀刻转移步骤和化学处理而被硬化或改变的光致抗蚀剂。 在一些应用中，干法蚀刻步骤可以从剥离工艺中省略，或者干法蚀刻步骤可以与一体化工艺中的水组合。

公开(公告)号：US20060088784A1

公开(公告)日：2006-04-27

申请号：US10971268

申请日：2004-10-21

申请人： Fei-Yun Chen ,  Jen-Shian Shieh ,  Hao-Chin Yuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

发明人： Fei-Yun Chen ,  Jen-Shian Shieh ,  Hao-Chin Yuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

IPC分类号： G03C11/12

CPC分类号： G03F7/423

摘要： The present subject matter relates to a method of stripping a photoresist after the photoresist film has been subjected to a high dose and high energy ion implant process. The method involves soaking the photoresist film in DI water, dry etching with oxygen plasma, and immersing in Caro's acid solution to improve the throughput of removing the film from the underlying substrate. The method can also be used to strip photoresist that has been hardened or altered by other types of processes such as dry etch transfer steps and chemical treatments. In some applications, the dry etching step may be omitted from the stripping process or the dry etching step may be combined with the water soak in an integrated process.

摘要翻译： 本主题涉及在光致抗蚀剂膜已经经受高剂量和高能量离子注入工艺之后剥离光致抗蚀剂的方法。 该方法包括将光致抗蚀剂膜浸入去离子水中，用氧等离子体进行干法蚀刻，并将其浸入Caro酸溶液中以提高从底层衬底去除膜的通过量。 该方法还可用于剥离已经通过其他类型的工艺如干蚀刻转移步骤和化学处理而被硬化或改变的光致抗蚀剂。 在一些应用中，干法蚀刻步骤可以从剥离工艺中省略，或者干法蚀刻步骤可以与一体化工艺中的水组合。