公开(公告)号：US07180651B2

公开(公告)日：2007-02-20

申请号：US11002766

申请日：2004-12-02

申请人： Shan-Hua Wu ,  Fei-Yun Chen ,  Wei-Ya Wang ,  Hung-Hsin Liu ,  Sheng-Liang Pan

发明人： Shan-Hua Wu ,  Fei-Yun Chen ,  Wei-Ya Wang ,  Hung-Hsin Liu ,  Sheng-Liang Pan

IPC分类号： G02F26/00

CPC分类号： G02B26/0833

摘要： A method for use in manufacturing a microelectromechanical system, such as a reflective stealth mirror includes the steps of: forming an I-shape mirror structure; forming a spacer layer over the I-shape mirror structure; and patterning the spacer layer to form at least one spacer along a side of the I-shape mirror structure.

摘要翻译： 一种用于制造诸如反射式隐形镜的微机电系统的方法包括以下步骤：形成I形镜结构; 在所述I形镜结构上形成间隔层; 以及图案化间隔层以沿着I形镜结构的一侧形成至少一个间隔物。

公开(公告)号：US07576374B2

公开(公告)日：2009-08-18

申请号：US11475341

申请日：2006-06-26

申请人： Yuan-Pang Lee ,  Chen-Shiang Shieh ,  Ping-Hung Yin ,  Fei-Yun Chen ,  Yuan-Ko Hwang

发明人： Yuan-Pang Lee ,  Chen-Shiang Shieh ,  Ping-Hung Yin ,  Fei-Yun Chen ,  Yuan-Ko Hwang

IPC分类号： H01L29/00

CPC分类号： H01L23/5258 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of native oxide over the surface of the created polysilicon fuse, followed by a DI water rinse. This thin layer of native oxide is made more robust by applying a second oxide plasma treatment to exposed surfaces, this more robust layer of native oxide protects the polysilicon fuse during subsequent processing steps of wet photoresist and polymer removal.

摘要翻译： 提供了一种新的方法来产生多晶硅保险丝。 本发明提供了将第一氧化物等离子体处理应用到所产生的多晶硅保险丝的表面上，在所产生的多晶硅保险丝的表面上产生一层自然氧化物，然后进行去离子水冲洗。 通过对暴露的表面施加第二氧化物等离子体处理，使这种天然氧化物薄层变得更加坚固。在湿光致抗蚀剂和聚合物去除的后续处理步骤中，更坚固的天然氧化物层保护多晶硅熔丝。

公开(公告)号：US20070285760A1

公开(公告)日：2007-12-13

申请号：US11450236

申请日：2006-06-09

申请人： Dah-Chuen Ho ,  Eugene Chu ,  Yuh-Haw Chang ,  Fei-Yun Chen ,  Michael Wu ,  Eric Chao

发明人： Dah-Chuen Ho ,  Eugene Chu ,  Yuh-Haw Chang ,  Fei-Yun Chen ,  Michael Wu ,  Eric Chao

IPC分类号： G02B26/00

CPC分类号： G02B26/0833 ,  G02B26/0841

摘要： A method comprising providing a first substrate and forming a first sacrificial layer over the first substrate, the first sacrificial layer comprising a curved surface portion, and forming a curved micromirror by depositing a reflective material over at the curved surface portion.

摘要翻译： 一种方法，包括提供第一衬底并在所述第一衬底上形成第一牺牲层，所述第一牺牲层包括弯曲表面部分，以及通过在所述弯曲表面部分上沉积反射材料形成弯曲微镜。

公开(公告)号：US07294279B2

公开(公告)日：2007-11-13

申请号：US11081645

申请日：2005-03-17

申请人： Fei-Yun Chen ,  Tzu-Yang Wu ,  Shih-Shiung Chen

发明人： Fei-Yun Chen ,  Tzu-Yang Wu ,  Shih-Shiung Chen

IPC分类号： C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00

CPC分类号： C03C15/00 ,  B81B2201/042 ,  B81C1/00476 ,  H01L21/0206 ,  H01L21/32134

摘要： A method for releasing a micromechanical structure. A substrate is provided. At least one micromechanical structural layer is provided above the substrate, wherein the micromechanical structural layer is sustained by a sacrificial layer of a silicon material. An amine-based etchant is provided to etch the silicon material. That is, during performing a post-cleaning procedure with an amine-based etchant, polymer residue and the sacrificial layer of silicon can be simultaneously removed without any additional etching processes.

摘要翻译： 一种用于释放微机械结构的方法。 提供基板。 在衬底上方提供至少一个微机械结构层，其中微机械结构层由硅材料的牺牲层维持。 提供了一种基于胺的蚀刻剂来蚀刻硅材料。 也就是说，在用胺类蚀刻剂进行后清洗过程时，可以同时除去聚合物残余物和硅的牺牲层而无需任何额外的蚀刻工艺。

公开(公告)号：US07192489B2

公开(公告)日：2007-03-20

申请号：US10428509

申请日：2003-05-01

申请人： Chi-Hsin Lo ,  Fei-Yun Chen

发明人： Chi-Hsin Lo ,  Fei-Yun Chen

IPC分类号： B08B3/00

CPC分类号： H01L21/02071 ,  G03F7/425 ,  H01L21/31133 ,  Y10S438/906

摘要： A method for removing polymer containing residues from a semiconductor wafer including metal containing features including providing a semiconductor wafer having a process surface including metal containing features said process surface at least partially covered with polymer containing residues; and, subjecting the semiconductor wafer to a series of cleaning steps including sequentially exposing the process surface to at least one primary solvent and at least one intermediate solvent the at least one intermediate solvent comprising an ammonium nitrate containing solution.

摘要翻译： 一种用于从半导体晶片中除去含有残余物的聚合物的方法，包括含金属的特征，包括提供半导体晶片，所述半导体晶片具有包含含有金属的工艺表面， 以及对所述半导体晶片进行一系列清洁步骤，包括将所述工艺表面依次暴露于至少一种主要溶剂和至少一种中间溶剂，所述至少一种中间体溶剂包含含硝酸铵的溶液。

公开(公告)号：US20060166509A1

公开(公告)日：2006-07-27

申请号：US11044857

申请日：2005-01-26

申请人： Fei-Yun Chen ,  Ni-Hwi Kuan ,  Yuh-Hwa Chang ,  Yuan-Pang Lee ,  Yuan-Ko Hwang ,  Shuh-Shun Chen

发明人： Fei-Yun Chen ,  Ni-Hwi Kuan ,  Yuh-Hwa Chang ,  Yuan-Pang Lee ,  Yuan-Ko Hwang ,  Shuh-Shun Chen

IPC分类号： H01L21/302 ,  H01L21/31

CPC分类号： H01L21/3065 ,  B81C1/00595 ,  H01L21/32136

摘要： A method for forming a MEMS device using an amorphous silicon layer as a release layer includes etching superjacent films and using the amorphous silicon layer as an etch stop layer. The amorphous silicon layer is resistant to attack during the post-etch solvent stripping operation due to the oxidation of exposed portions of the amorphous silicon layer by use of an oxygen plasma.

摘要翻译： 使用非晶硅层作为剥离层形成MEMS器件的方法包括蚀刻上层膜并使用非晶硅层作为蚀刻停止层。 由于通过使用氧等离子体对非晶硅层的暴露部分的氧化，非晶硅层在蚀刻前溶剂剥离操作期间抵抗攻击。

公开(公告)号：US20050260784A1

公开(公告)日：2005-11-24

申请号：US10978011

申请日：2004-10-29

申请人： Fei-Yun Chen ,  Wei-Ya Wang ,  Yuh-Hwa Chang ,  Tzu-Yang Wu

发明人： Fei-Yun Chen ,  Wei-Ya Wang ,  Yuh-Hwa Chang ,  Tzu-Yang Wu

IPC分类号： G02B26/08 ,  H01L21/00

CPC分类号： G02B26/0833

摘要： An MEMS mirror structure is formed using an etching process that forms sidewall oxide spacers while maintaining the integrity of the oxide layer formed over the reflective layer of the MEMS mirror structure. The discrete mirror structure is formed to include a reflective layer sandwiched between oxide layers and with a protect layer formed over the upper oxide layer. A spacer oxide layer is formed to cover the structure and oxide spacers are formed on sidewalls of the discrete structure using a selective etch process that is terminated when horizontal portions of the spacer oxide layer have cleared to expose the release layer formed below the discrete mirror structure and the protect layer. The superjacent protect layer prevents the spacer oxide etch process from attacking the upper oxide layer and therefore maintains the integrity of the upper oxide layer and the functionality of the mirror structure.

摘要翻译： 使用形成侧壁氧化物间隔物的蚀刻工艺形成MEMS镜结构，同时保持在MEMS镜结构的反射层上形成的氧化物层的完整性。 离散镜结构被形成为包括夹在氧化物层之间的反射层和形成在上氧化物层上的保护层。 形成间隔氧化物层以覆盖该结构，并且使用选择性蚀刻工艺在离散结构的侧壁上形成氧化物间隔物，该选择性蚀刻工艺在间隔氧化物层的水平部分已经清除以暴露形成在离散镜结构下方的释放层时终止 和保护层。 上部保护层防止间隔氧化物蚀刻工艺攻击上部氧化物层，从而保持上部氧化物层的完整性和反射镜结构的功能。

公开(公告)号：US20140021539A1

公开(公告)日：2014-01-23

申请号：US13554880

申请日：2012-07-20

申请人： Shih-Kuang Hsiao ,  Chen-Liang Chu ,  Yi-Sheng Chen ,  Fei-Yun Chen ,  Kong-Beng Thei

发明人： Shih-Kuang Hsiao ,  Chen-Liang Chu ,  Yi-Sheng Chen ,  Fei-Yun Chen ,  Kong-Beng Thei

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66492 ,  H01L21/761 ,  H01L29/1083 ,  H01L29/66575 ,  H01L29/7833

摘要： Presented herein is a field effect transistor device, optionally a lateral power transistor, and a method for forming the same, comprising providing a substrate, creating a doped buried layer, and creating a primary well in the substrate on the buried layer. A drift drain may be created in the primary well and a counter implant region implanted in the primary well and between the drift drain and the buried layer. The primary well may comprise a first and second implant region with the second implant region at a depth less than the first. The counter implant may be at a depth between the first and second implant regions. The primary well and counter implant region may comprise dopants of the same conductivity type, or both p+-type dopants. A gate may be formed over a portion of a drift drain.

摘要翻译： 这里呈现的是场效应晶体管器件，可选地是侧向功率晶体管及其形成方法，包括提供衬底，产生掺杂掩埋层，以及在掩埋层上的衬底中产生初级阱。 可以在主阱中产生漂移漏极，并且在初级阱中以及漂移漏极和埋层之间注入计数器注入区域。 主阱可以包括第一和第二注入区域，其中第二注入区域的深度小于第一注入区域。 计数器植入物可以处于第一和第二植入区域之间的深度。 主阱和计数器注入区域可以包括相同导电类型的掺杂剂，或者两种p +型掺杂剂。 栅极可以形成在漂移漏极的一部分上。

公开(公告)号：US07384799B2

公开(公告)日：2008-06-10

申请号：US11044857

申请日：2005-01-26

申请人： Fei-Yun Chen ,  Ni-Hwi Kuan ,  Yuh-Hwa Chang ,  Yuan-Pang Lee ,  Yuan-Ko Hwang ,  Shuh-Shun Chen

发明人： Fei-Yun Chen ,  Ni-Hwi Kuan ,  Yuh-Hwa Chang ,  Yuan-Pang Lee ,  Yuan-Ko Hwang ,  Shuh-Shun Chen

IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/302

CPC分类号： H01L21/3065 ,  B81C1/00595 ,  H01L21/32136

摘要： A method for forming a MEMS device using an amorphous silicon layer as a release layer includes etching superjacent films and using the amorphous silicon layer as an etch stop layer. The amorphous silicon layer is resistant to attack during the post-etch solvent stripping operation due to the oxidation of exposed portions of the amorphous silicon layer by use of an oxygen plasma.

摘要翻译： 使用非晶硅层作为剥离层形成MEMS器件的方法包括蚀刻上层膜并使用非晶硅层作为蚀刻停止层。 由于通过使用氧等离子体对非晶硅层的暴露部分的氧化，非晶硅层在蚀刻前溶剂剥离操作期间抵抗攻击。

公开(公告)号：US07144673B2

公开(公告)日：2006-12-05

申请号：US10971268

申请日：2004-10-21

申请人： Fei-Yun Chen ,  Jen-Shian Shieh ,  Hao-Chih Yuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

发明人： Fei-Yun Chen ,  Jen-Shian Shieh ,  Hao-Chih Yuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

IPC分类号： G03F7/30 ,  G03F7/42

CPC分类号： G03F7/423

摘要： The present subject matter relates to a method of stripping a photoresist after the photoresist film has been subjected to a high dose and high energy ion implant process. The method involves soaking the photoresist film in DI water, dry etching with oxygen plasma, and immersing in Caro's acid solution to improve the throughput of removing the film from the underlying substrate. The method can also be used to strip photoresist that has been hardened or altered by other types of processes such as dry etch transfer steps and chemical treatments. In some applications, the dry etching step may be omitted from the stripping process or the dry etching step may be combined with the water soak in an integrated process.

摘要翻译： 本主题涉及在光致抗蚀剂膜已经经受高剂量和高能量离子注入工艺之后剥离光致抗蚀剂的方法。 该方法包括将光致抗蚀剂膜浸入去离子水中，用氧等离子体进行干法蚀刻，并将其浸入Caro酸溶液中以提高从底层衬底去除膜的通过量。 该方法还可用于剥离已经通过其他类型的工艺如干蚀刻转移步骤和化学处理而被硬化或改变的光致抗蚀剂。 在一些应用中，干法蚀刻步骤可以从剥离工艺中省略，或者干法蚀刻步骤可以与一体化工艺中的水组合。