公开(公告)号：US07378866B2

公开(公告)日：2008-05-27

申请号：US11942396

申请日：2007-11-19

申请人： Fen Chen ,  Kai D Feng ,  Robert J Gautheir ,  Tom C Lee

发明人： Fen Chen ,  Kai D Feng ,  Robert J Gautheir ,  Tom C Lee

IPC分类号： H03K17/16 ,  H03K19/003

CPC分类号： H03K19/018571

摘要： A method for trimming impedance matching devices in high-speed circuits includes determining an electrical parameter associated with a first tantalum nitride (TaN) resistor used as an impedance matching device in the circuit under test, and comparing the determined electrical parameter associated with the first TaN resistor to a desired design value of the electrical parameter. The resistance value of the first TaN resistor is altered by application of a trimming voltage thereto, wherein the trimming voltage is based on a voltage-resistance characteristic curve of the first TaN resistor. It is then determined whether the altered resistance value of the first TaN resistor causes the electrical parameter to equal the desired design value thereof, and the altering of the resistance value of the first TaN resistor by application of a trimming voltage is repeated until the electrical parameter equals the desired design value thereof.