公开(公告)号：US06429526B1

公开(公告)日：2002-08-06

申请号：US09310649

申请日：1999-05-12

申请人： Guy Blalock ,  Kirk Prall ,  Fernando Gonzalez

发明人： Guy Blalock ,  Kirk Prall ,  Fernando Gonzalez

IPC分类号： H01L2348

CPC分类号： H01L23/5283 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a connection is comprised of the steps of depositing a lower conductor. A dielectric layer is deposited on the lower conductor, with the dielectric layer having a lower surface adjacent to the lower conductor, and having an upper surface. An opening extending between the upper surface and the lower surface of the dielectric layer is formed. A conductive plug is deposited within the opening, with the plug having an upper surface proximate the upper surface of the dielectric layer. The upper surface has an edge where the upper surface of the plug is adjacent to the dielectric layer. A recess is formed proximate to the edge of the upper surface of the plug, the recess extending into both the plug and the dielectric layer. Finally, an upper conductor is deposited on the upper surface of the dielectric layer and the upper surface of the plug. A connection thus formed is also disclosed.

公开(公告)号：US06420786B1

公开(公告)日：2002-07-16

申请号：US08595806

申请日：1996-02-02

申请人： Fernando Gonzalez ,  Guy Blalock

发明人： Fernando Gonzalez ,  Guy Blalock

IPC分类号： H01L2348

CPC分类号： H01L21/76865 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of constructing a conductive via spacer within a dielectric layer located between a first metal layer and a second metal layer includes the steps of depositing a conductive spacer layer within the opening and over the first metal layer. A portion of the conductive spacer layer is removed to leave a conductive spacer within the opening. The second metal layer is deposited over the spacer to complete the connection between the first and second metal layers. The spacer preferably comprises a material selected from the group comprising refractory metal silicides and nitrides. The spacer is preferably tapered and the via may include a glue layer to improve the adherence of the spacer to the dielectric layer.

摘要翻译： 在位于第一金属层和第二金属层之间的电介质层内构造导电通孔间隔物的方法包括以下步骤：在开口内和第一金属层之上沉积导电隔离层。 去除导电间隔层的一部分以在开口内留下导电间隔物。 第二金属层沉积在间隔物上以完成第一和第二金属层之间的连接。 间隔物优选包含选自难熔金属硅化物和氮化物的材料。 间隔件优选是锥形的，并且通孔可以包括胶层，以改善间隔物对电介质层的粘附。

公开(公告)号：US6066559A

公开(公告)日：2000-05-23

申请号：US985088

申请日：1997-12-04

申请人： Fernando Gonzalez ,  Guy Blalock ,  Kirk Prall

发明人： Fernando Gonzalez ,  Guy Blalock ,  Kirk Prall

IPC分类号： H01L23/485 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L21/44

CPC分类号： H01L23/5283 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/535 ,  H01L2924/0002

摘要： A method of forming a connection is comprised of the steps of depositing a lower conductor. A dielectric layer is deposited on the lower conductor, with the dielectric layer having a lower surface adjacent to the lower conductor, and having an upper surface. An opening extending between the upper surface and the lower surface of the dielectric layer is formed. A conductive plug is deposited within the opening, with the plug having an upper surface proximate the upper surface of the dielectric layer. The upper surface has an edge where the upper surface of the plug is adjacent to the dielectric layer. A recess is formed proximate to the edge of the upper surface of the plug, the recess extending into both the plug and the dielectric layer. Finally, an upper conductor is deposited on the upper surface of the dielectric layer and the upper surface of the plug. A connection thus formed is also disclosed.

公开(公告)号：US06426287B2

公开(公告)日：2002-07-30

申请号：US09903338

申请日：2001-07-11

申请人： Guy Blalock ,  Kirk Prall ,  Fernando Gonzalez

发明人： Guy Blalock ,  Kirk Prall ,  Fernando Gonzalez

IPC分类号： H01L21476

CPC分类号： H01L23/5283 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a connection is comprised of the steps of depositing a lower conductor. A dielectric layer is deposited on the lower conductor, with the dielectric layer having a lower surface adjacent to the lower conductor, and having an upper surface. An opening extending between the upper surface and the lower surface of the dielectric layer is formed. A conductive plug is deposited within the opening, with the plug having an upper surface proximate the upper surface of the dielectric layer. The upper surface has an edge where the upper surface of the plug is adjacent to the dielectric layer. A recess is formed proximate to the edge of the upper surface of the plug, the recess extending into both the plug and the dielectric layer. Finally, an upper conductor is deposited on the upper surface of the dielectric layer and the upper surface of the plug. A connection thus formed is also disclosed.

摘要翻译： 形成连接的方法包括沉积下导体的步骤。 电介质层沉积在下导体上，电介质层具有与下导体相邻的下表面，并具有上表面。 形成在电介质层的上表面和下表面之间延伸的开口。 导电插塞沉积在开口内，插头具有接近电介质层的上表面的上表面。 上表面具有插头的上表面与电介质层相邻的边缘。 在插头的上表面的边缘附近形成凹部，凹部延伸到插塞和介电层两者中。 最后，在电介质层的上表面和插头的上表面上沉积上导体。 还公开了如此形成的连接。

公开(公告)号：US06277731B1

公开(公告)日：2001-08-21

申请号：US09584256

申请日：2000-05-31

申请人： Fernando Gonzalez ,  Guy Blalock ,  Kirk Prall

发明人： Fernando Gonzalez ,  Guy Blalock ,  Kirk Prall

IPC分类号： H01L214763

CPC分类号： H01L23/5283 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a connection is comprised of the steps of depositing a lower conductor. A dielectric layer is deposited on the lower conductor, with the dielectric layer having a lower surface adjacent to the lower conductor, and having an upper surface. An opening extending between the upper surface and the lower surface of the dielectric layer is formed. A conductive plug is deposited within the opening, with the plug having an upper surface proximate the upper surface of the dielectric layer. The upper surface has an edge where the upper surface of the plug is adjacent to the dielectric layer. A recess is formed proximate to the edge of the upper surface of the plug, the recess extending into both the plug and the dielectric layer. Finally, an upper conductor is deposited on the upper surface of the dielectric layer and the upper surface of the plug. A connection thus formed is also disclosed.

摘要翻译： 形成连接的方法包括沉积下导体的步骤。 电介质层沉积在下导体上，电介质层具有与下导体相邻的下表面，并具有上表面。 形成在电介质层的上表面和下表面之间延伸的开口。 导电插塞沉积在开口内，插头具有接近电介质层的上表面的上表面。 上表面具有插头的上表面与电介质层相邻的边缘。 在插头的上表面的边缘附近形成凹部，凹部延伸到插塞和介电层两者中。 最后，在电介质层的上表面和插头的上表面上沉积上导体。 还公开了如此形成的连接。

公开(公告)号：US6043151A

公开(公告)日：2000-03-28

申请号：US59759

申请日：1998-04-14

申请人： Fernando Gonzalez ,  Guy Blalock ,  Kirk Prall

发明人： Fernando Gonzalez ,  Guy Blalock ,  Kirk Prall

IPC分类号： H01L23/485 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L21/44

CPC分类号： H01L23/5283 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/535 ,  H01L2924/0002

摘要： A method of forming a connection is comprised of the steps of depositing a lower conductor. A dielectric layer is deposited on the lower conductor, with the dielectric layer having a lower surface adjacent to the lower conductor, and having an upper surface. An opening extending between the upper surface and the lower surface of the dielectric layer is formed. A conductive plug is deposited within the opening, with the plug having an upper surface proximate the upper surface of the dielectric layer. The upper surface has an edge where the upper surface of the plug is adjacent to the dielectric layer. A recess is formed proximate to the edge of the upper surface of the plug, the recess extending into both the plug and the dielectric layer. Finally, an upper conductor is deposited on the upper surface of the dielectric layer and the upper surface of the plug. A connection thus formed is also disclosed.

公开(公告)号：US5994220A

公开(公告)日：1999-11-30

申请号：US595834

申请日：1996-02-02

申请人： Fernando Gonzalez ,  Guy Blalock ,  Kirk Prall

发明人： Fernando Gonzalez ,  Guy Blalock ,  Kirk Prall

IPC分类号： H01L23/485 ,  H01L23/522 ,  H01L23/528 ,  H01L23/535 ,  H01L21/44

CPC分类号： H01L23/5283 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/535 ,  H01L2924/0002

摘要： A method of forming a connection is comprised of the steps of depositing a lower conductor. A dielectric layer is deposited on the lower conductor, with the dielectric layer having a lower surface adjacent to the lower conductor, and having an upper surface. An opening extending between the upper surface and the lower surface of the dielectric layer is formed. A conductive plug is deposited within the opening, with the plug having an upper surface proximate the upper surface of the dielectric layer. The upper surface has an edge where the upper surface of the plug is adjacent to the dielectric layer. A recess is formed proximate to the edge of the upper surface of the plug, the recess extending into both the plug and the dielectric layer. Finally, an upper conductor is deposited on the upper surface of the dielectric layer and the upper surface of the plug. A connection thus formed is also disclosed.

公开(公告)号：US06222273B1

公开(公告)日：2001-04-24

申请号：US09016753

申请日：1998-01-30

申请人： Fernando Gonzalez ,  Guy Blalock

发明人： Fernando Gonzalez ,  Guy Blalock

IPC分类号： H01L2348

CPC分类号： H01L21/76865 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of constructing a conductive via spacer within a dielectric layer located between a first metal layer and a second metal layer includes the steps of depositing a conductive spacer layer within the opening and over the first metal layer. A portion of the conductive spacer layer is removed to leave a conductive spacer within the opening. The second metal layer is deposited over the spacer to complete the connection between the first and second metal layers. The spacer preferably comprises a material selected from the group comprising refractory metal silicides and nitrides. The spacer is preferably tapered and the via may include a glue layer to improve the adherence of the spacer to the dielectric layer.

摘要翻译： 在位于第一金属层和第二金属层之间的电介质层内构造导电通孔间隔物的方法包括以下步骤：在开口内和第一金属层之上沉积导电隔离层。 去除导电间隔层的一部分以在开口内留下导电间隔物。 第二金属层沉积在间隔物上以完成第一和第二金属层之间的连接。 间隔物优选包含选自难熔金属硅化物和氮化物的材料。 间隔件优选是锥形的，并且通孔可以包括胶层，以改善间隔物对电介质层的粘附。

公开(公告)号：US06448656B1

公开(公告)日：2002-09-10

申请号：US09583679

申请日：2000-05-31

申请人： Fernando Gonzalez ,  Guy Blalock ,  Kirk Prall

发明人： Fernando Gonzalez ,  Guy Blalock ,  Kirk Prall

IPC分类号： H01L2348

CPC分类号： H01L23/5283 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a connection is comprised of the steps of depositing a lower conductor. A dielectric layer is deposited on the lower conductor, with the dielectric layer having a lower surface adjacent to the lower conductor, and having an upper surface. An opening extending between the upper surface and the lower surface of the dielectric layer is formed. A conductive plug is deposited within the opening, with the plug having an upper surface proximate the upper surface of the dielectric layer. The upper surface has an edge where the upper surface of the plug is adjacent to the dielectric layer. A recess is formed proximate to the edge of the upper surface of the plug, the recess extending into both the plug and the dielectric layer. Finally, an upper conductor is deposited on the upper surface of the dielectric layer and the upper surface of the plug. A connection thus formed is also disclosed.

摘要翻译： 形成连接的方法包括沉积下导体的步骤。 电介质层沉积在下导体上，电介质层具有与下导体相邻的下表面，并具有上表面。 形成在电介质层的上表面和下表面之间延伸的开口。 导电插塞沉积在开口内，插头具有接近电介质层的上表面的上表面。 上表面具有插头的上表面与电介质层相邻的边缘。 在插头的上表面的边缘附近形成凹部，凹部延伸到插塞和介电层两者中。 最后，在电介质层的上表面和插头的上表面上沉积上导体。 还公开了如此形成的连接。

公开(公告)号：US06171964B2

公开(公告)日：2001-01-09

申请号：US09013633

申请日：1998-01-26

申请人： Fernando Gonzalez ,  Guy Blalock

发明人： Fernando Gonzalez ,  Guy Blalock

IPC分类号： H01L2348

CPC分类号： H01L21/76865 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of constructing a conductive via spacer within a dielectric layer located between a first metal layer and a second metal layer includes the steps of depositing a conductive spacer layer within the opening and over the first metal layer. A portion of the conductive spacer layer is removed to leave a conductive spacer within the opening. The second metal layer is deposited over the spacer to complete the connection between the first and second metal layers. The spacer preferably comprises a material selected from the group comprising refractory metal silicides and nitrides. The spacer is preferably tapered and the via may include a glue layer to improve the adherence of the spacer to the dielectric layer.

摘要翻译： 在位于第一金属层和第二金属层之间的电介质层内构造导电通孔间隔物的方法包括以下步骤：在开口内和第一金属层之上沉积导电隔离层。 去除导电间隔层的一部分以在开口内留下导电间隔物。 第二金属层沉积在间隔物上以完成第一和第二金属层之间的连接。 间隔物优选包含选自难熔金属硅化物和氮化物的材料。 间隔件优选是锥形的，并且通孔可以包括胶层，以改善间隔物对电介质层的粘附。