公开(公告)号：US10886471B2

公开(公告)日：2021-01-05

申请号：US16620094

申请日：2018-06-06

Applicant: Flexterra, Inc.

Inventor： Zhihua Chen ,  Darwin Scott Bull ,  Mark Seger ,  Timothy Chiu ,  Yu Xia ,  Antonio Facchetti

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/10

Abstract: The present teachings relate to novel polymeric materials for electrode treatment. The present polymeric electrode modifiers can be derived from an episulfide monomer via either an acid-catalyzed ring-opening polymerization reaction or a nucleophilic polymerization reaction.

公开(公告)号：US11882710B2

公开(公告)日：2024-01-23

申请号：US17275547

申请日：2019-11-19

Applicant: Flexterra, Inc.

Inventor： Antonio Facchetti ,  Yu Xia ,  Zhihua Chen ,  Timothy Chiu ,  Shaofeng Lu

IPC: H10K10/46 ,  H10K85/60

CPC classification number: H10K10/484 ,  H10K10/471 ,  H10K85/621

Abstract: This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.

公开(公告)号：US11345778B2

公开(公告)日：2022-05-31

申请号：US16962760

申请日：2019-01-21

Applicant: Flexterra, Inc.

Inventor： Shaofeng Lu ,  Antonio Facchetti ,  Mark Seger ,  Zhihua Chen ,  Yu Xia ,  Timothy Chiu ,  Joshua Lee Ayers

IPC: C08G61/08 ,  H01L51/05

Abstract: Disclosed are low-temperature thermally and/or ultraviolet light curable polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such low-temperature thermally and/or ultraviolet light curable polymers. In some embodiments, the device can include a passivation layer prepared from the low-temperature thermally and/or ultraviolet light curable polymers described herein. In certain embodiments, a polymer of the disclosure has a repeating unit having the structure (I) in which Q1-Q2 and Q3-Q4 are each independently —C(H)═C(H)— or (II) in which each n is independently selected from 1, 2, 3 and 4, and the polymer includes at least one repeating unit of Formula (I) wherein Q1-Q2 and Q3-Q4 is (II).

公开(公告)号：US20210257568A1

公开(公告)日：2021-08-19

申请号：US17275547

申请日：2019-11-19

Applicant: Flexterra, Inc.

Inventor： Antonio Facchetti ,  Yu Xia ,  Zhihua Chen ,  Timothy Chiu ,  Shaofeng Lu

IPC: H01L51/05 ,  H01L51/00

Abstract: This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.