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公开(公告)号：US20240044044A1
公开(公告)日：2024-02-08
申请号：US18363366
申请日：2023-08-01
CPC分类号： C30B29/36 , C30B29/403 , C30B23/002
摘要： The invention relates to a crystal growth device for growing a semiconductor from a gas phase, the crystal growth device comprising, a crucible, a heater, and a holding plate. The crucible on a crucible vessel and a crucible lid supported on the crucible vessel, wherein the crucible vessel is configured to receive and hold a source material for the semiconductor during growth of the semiconductor. The heater is configured and arranged to heat the source material in the crucible vessel so that the source material at least partially changes to its gaseous phase and flows toward the crucible lid. The holding plate is configured to hold a seed crystal on a side of the holding plate facing the crucible lid, and to allow deposition of the source material that has changed into its gas phase on the seed crystal for growing the semiconductor. The holding plate is further configured to be spaced from a crucible bottom of the crucible vessel for growing the semiconductor, such that it is located between the source material and the crucible lid.
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