公开(公告)号：US20110014791A1

公开(公告)日：2011-01-20

申请号：US12891365

申请日：2010-09-27

申请人： Frank S. JOHNSON ,  Richard T. SCHULTZ

发明人： Frank S. JOHNSON ,  Richard T. SCHULTZ

IPC分类号： H01L21/311

CPC分类号： H01L21/823431 ,  H01L29/66795 ,  H01L29/66818

摘要： Methods for fabricating FinFET structures having gate structures of different gate widths are provided. The methods include the formation of sidewall spacers of different thicknesses to define gate structures of the FinFET structures with different gate widths. The width of a sidewall spacer is defined by the height of the structure about which the sidewall spacer is formed, the thickness of the sidewall spacer material layer from which the spacer is formed, and the etch parameters used to etch the sidewall spacer material layer. By forming structures of varying height, forming the sidewall spacer material layer of varying thickness, or a combination of these, sidewall spacers of varying width can be fabricated and subsequently used as an etch mask so that gate structures of varying widths can be formed simultaneously.

摘要翻译： 提供了制造具有不同栅极宽度的栅极结构的FinFET结构的方法。 这些方法包括形成不同厚度的侧壁间隔物，以限定具有不同栅极宽度的FinFET结构的栅极结构。 侧壁间隔物的宽度由形成侧壁间隔物的结构的高度，形成间隔物的侧壁间隔材料层的厚度和用于蚀刻侧壁间隔物材料层的蚀刻参数限定。 通过形成不同高度的结构，形成不同厚度的侧壁间隔物材料层或这些的组合，可以制造不同宽度的侧壁间隔物，并随后用作蚀刻掩模，从而可以同时形成不同宽度的栅极结构。