公开(公告)号：US20080088542A1

公开(公告)日：2008-04-17

申请号：US11645971

申请日：2006-12-26

申请人： Franky So ,  Florian Pschenitzka ,  Egbert Hoeflling

发明人： Franky So ,  Florian Pschenitzka ,  Egbert Hoeflling

IPC分类号： G09G3/30

CPC分类号： G09G3/3216 ,  G01R31/3008 ,  G09G3/006

摘要： One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.

摘要翻译： 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流，所以通过识别具有相对高的漏电流的元件，可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作：选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压，或者一次依次测量一条线或同时测量所有线。