公开(公告)号：US12120813B2

公开(公告)日：2024-10-15

申请号：US17212736

申请日：2021-03-25

申请人： Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.

发明人： Peter Ramm ,  Josef Weber

IPC分类号： H05K1/02 ,  H01B11/18 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24

CPC分类号： H05K1/0243 ,  H01B11/18 ,  H01L23/66 ,  H01Q1/2283 ,  H01Q1/243

摘要： A radio-frequency arrangement is described. The radio-frequency arrangement has a first radio-frequency component, a second radio-frequency component and a wiring substrate having a coaxial radio-frequency line formed in the wiring substrate, wherein the first radio-frequency component and the second radio-frequency component are connected via the coaxial radio-frequency line.

公开(公告)号：US11610967B2

公开(公告)日：2023-03-21

申请号：US16936133

申请日：2020-07-22

申请人： Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.

发明人： Peter Ramm ,  Armin Klumpp

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L29/24 ,  H01L29/732

摘要： The invention relates to a vertical compound semiconductor structure having a substrate with a first main surface and an opposite second main surface, a vertical channel opening extending completely through the substrate between the first main surface and the second main surface and a layer stack arranged within the vertical channel opening. The layer stack includes an electrically conductive layer arranged within the vertical channel opening and a compound semiconductor layer arranged within the vertical channel opening. The compound semiconductor layer includes a compound semiconductor layer arranged on the electrically conductive layer and connected galvanically to the electrically conductive layer. Further, the invention relates to a method for producing such a vertical compound semiconductor structure.