公开(公告)号：US08830776B1

公开(公告)日：2014-09-09

申请号：US13835068

申请日：2013-03-15

Applicant: Freescale Semiconductor, Inc.

Inventor： Jon S. Choy ,  Gilles J. Muller ,  Karthik Ramanan

IPC: G11C7/00 ,  G05F1/46

CPC classification number: G05F1/46 ,  H02M1/15 ,  H02M3/07 ,  H02M2001/0045 ,  H02M2003/071

Abstract: A negative charge pump is responsive to a pump enable signal. A voltage controlled current source provides a current. A resistor is coupled between a node from the voltage controlled current source and a negative charge output from the negative charge pump. A capacitor is placed in parallel with the resistor. A comparator generates the pump enable signal to control the negative charge pump. The comparator is coupled to the resistor and the capacitor and measures an IR drop thereacross and compares this measurement against a reference threshold. A level of the pump enable signal can be variable by tuning an amount of resistance of the resistor or capacitor or adjusting the reference threshold. A memory can be driven by a method of the negative charge pump.

Abstract translation: 负电荷泵响应于泵使能信号。 电压控制电流源提供电流。 电阻器耦合在来自压控电流源的节点和来自负电荷泵的负电荷输出之间。 电容器与电阻器并联放置。 比较器产生泵使能信号来控制负电荷泵。 比较器耦合到电阻器和电容器，并测量其上的IR电压，并将此测量值与参考阈值进行比较。 通过调节电阻或电容器的电阻量或调整参考阈值，可以使泵启用信号的电平可变。 存储器可以由负电荷泵的方法驱动。