公开(公告)号：US06491752B1

公开(公告)日：2002-12-10

申请号：US09354994

申请日：1999-07-16

申请人： Fritz G. Kirscht ,  Peter D. Wildes ,  Volker R. Todt ,  Nobuo Fukuto ,  Boris A. Snegirev ,  Seung-Bae Kim

发明人： Fritz G. Kirscht ,  Peter D. Wildes ,  Volker R. Todt ,  Nobuo Fukuto ,  Boris A. Snegirev ,  Seung-Bae Kim

IPC分类号： H01L21228

CPC分类号： C30B29/06 ,  C30B15/04

摘要： An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.

摘要翻译： 描述了用于外延衬底的增强的n +硅材料及其制造方法。 增强的材料导致基于这些衬底的n / n +外延晶片的改善的吸杂特性。 制备这种n +硅材料的方法包括在生长各自的CZ晶体之前，将碳共掺杂到硅熔体中的通常的n掺杂剂中。 这提高了晶体生长中增强的n +硅材料的产率，并且当这种n / n +外延晶片应用于器件制造时，最终导致器件产量稳定或改进。