公开(公告)号：US06519869B2

公开(公告)日：2003-02-18

申请号：US09854960

申请日：2001-05-15

Applicant: Fu-Sheng Peng

Inventor： Fu-Sheng Peng

IPC: F26B700

CPC classification number: H01L21/67034

Abstract: A method and an apparatus for drying semiconductor wafers by using an IPA drying apparatus. The present invention uses a vapor generator to generate an IPA vapor. The IPA vapor is generated and saved in a closed surrounding and then transferred in a porous hollow plate in the dryer tank by using a quartz pipe. The IPA vapor is diffused evenly from the porous hollow plate. Furthermore, the present invention increases the safety of the process and can easily control the input amount of the IPA vapor.

Abstract translation: 一种通过使用IPA干燥装置干燥半导体晶片的方法和装置。 本发明使用蒸汽发生器来产生IPA蒸气。 产生IPA蒸气并将其保存在封闭的环境中，然后通过使用石英管在干燥箱中的多孔中空板中转移。 IPA蒸气从多孔中空板均匀扩散。 此外，本发明增加了该方法的安全性，并且可以容易地控制IPA蒸气的输入量。

公开(公告)号：US07342239B2

公开(公告)日：2008-03-11

申请号：US11164537

申请日：2005-11-29

Applicant: Fu-Sheng Peng

Inventor： Fu-Sheng Peng

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/2443 ,  H01J2237/24542 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: An ion implantation method and device for forming an ion implantation area in a predetermined area of a substrate is provided. The method comprises the following steps. First, an ion beam is provided, then a first shape of cross-section and a first ion density distribution of the ion beam are detected. Then, a second shape of cross-section and a second ion density distribution of the ion beam are detected by moving the ion beam along a predetermined scanning path. Thereafter, the predetermined scanning path is adjusted and optimized according to the first shape of cross-section, the first ion density distribution, the second shape of cross-section and the second ion density distribution. Then, the ion beam is optimized along the optimized predetermined scanning path to form the ion implantation area in the predetermined area of the substrate.

Abstract translation: 提供了一种用于在基板的预定区域中形成离子注入区域的离子注入方法和装置。 该方法包括以下步骤。 首先，提供离子束，然后检测离子束的第一截面形状和第一离子密度分布。 然后，通过沿着预定扫描路径移动离子束来检测离子束的第二形状的横截面和第二离子密度分布。 此后，根据第一形状的横截面，第一离子密度分布，第二形状的横截面和第二离子密度分布来调整和优化预定的扫描路径。 然后，沿着优化的预定扫描路径优化离子束，以在衬底的预定区域中形成离子注入区域。

公开(公告)号：US20070120073A1

公开(公告)日：2007-05-31

申请号：US11164537

申请日：2005-11-29

Applicant: Fu-Sheng Peng

Inventor： Fu-Sheng Peng

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/2443 ,  H01J2237/24542 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: An ion implantation method and device for forming an ion implantation area in a predetermined area of a substrate is provided. The method comprises the following steps. First, an ion beam is provided, then a first shape of cross-section and a first ion density distribution of the ion beam are detected. Then, a second shape of cross-section and a second ion density distribution of the ion beam are detected by moving the ion beam along a predetermined scanning path. Thereafter, the predetermined scanning path is adjusted and optimized according to the first shape of cross-section, the first ion density distribution, the second shape of cross-section and the second ion density distribution. Then, the ion beam is optimized along the optimized predetermined scanning path to form the ion implantation area in the predetermined area of the substrate.

Abstract translation: 提供了一种用于在基板的预定区域中形成离子注入区域的离子注入方法和装置。 该方法包括以下步骤。 首先，提供离子束，然后检测离子束的第一截面形状和第一离子密度分布。 然后，通过沿着预定扫描路径移动离子束来检测离子束的第二形状的横截面和第二离子密度分布。 此后，根据第一形状的横截面，第一离子密度分布，第二形状的横截面和第二离子密度分布来调整和优化预定的扫描路径。 然后，沿着优化的预定扫描路径优化离子束，以在衬底的预定区域中形成离子注入区域。