-
1.
公开(公告)号:US20110316127A1
公开(公告)日:2011-12-29
申请号:US13255633
申请日:2010-02-19
申请人: Fumihiro Shiraishi , Mazakazu Kawata , Masahiro Yoneyama , Toyosei Takahashi , Hirohisa Dejima , Toshihiro Sato
发明人: Fumihiro Shiraishi , Mazakazu Kawata , Masahiro Yoneyama , Toyosei Takahashi , Hirohisa Dejima , Toshihiro Sato
CPC分类号: H01L27/14618 , C09J7/20 , H01L27/14627 , H01L27/14685 , H01L2924/0002 , Y10T428/24752 , H01L2924/00
摘要: A spacer formation film is adapted to be used for forming a spacer defining air-gap portions on a side of one surface of a semiconductor wafer and by being cut into a desired shape, the spacer formation film includes: a support base having a sheet-like shape; a spacer formation layer provided on the support base and having a bonding property, the spacer formation layer formed of a material containing an alkali soluble resin, a thermosetting resin and a photo polymerization initiator; and a cutting line along which the spacer formation film is to be cut, wherein the spacer formation layer is provided inside the cutting line so that a peripheral edge thereof is not overlapped to the cutting line.
摘要翻译: 间隔物形成膜适于用于形成在半导体晶片的一个表面的侧面上形成气隙部分并通过切割成所需形状的间隔物,所述间隔物形成膜包括:支撑基底, 像形状; 间隔物形成层,其设置在所述支撑基体上并具有接合特性,所述间隔物形成层由含有碱溶性树脂,热固性树脂和光聚合引发剂的材料形成; 以及要切割间隔物形成膜的切割线,其中间隔物形成层设置在切割线内部,使得其周缘不与切割线重叠。