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公开(公告)号：US06458212B1
公开(公告)日：2002-10-01
申请号：US09539393
申请日：2000-03-31
IPC分类号： C23C1600
CPC分类号： C23C16/4412 , Y10S55/30
摘要： One aspect of the present invention relates to a tetraethylorthosilicate chemical vapor deposition method, involving the steps of forming a film on a substrate using tetraethylorthosilicate in a chemical vapor deposition chamber; and removing tetraethylorthosilicate byproducts from the chemical vapor deposition chamber via a pump system and an exhaust line connected to the chemical vapor deposition chamber, the exhaust line comprising a mesh filter having a conical shape. Another aspect of the present invention relates to an exhaust system for removing tetraethylorthosilicate byproducts from a chemical vapor deposition chamber, containing an exhaust line connected to the chemical vapor deposition chamber, the exhaust line comprising a mesh filter having a conical shape via a pump system; and a pump system connected to the exhaust line for removing tetraethylorthosilicate byproducts from the processing chamber.
摘要翻译： 本发明的一个方面涉及一种四乙基原硅酸盐化学气相沉积方法，包括以下步骤：在化学气相沉积室中使用原硅酸四乙酯在基底上形成膜; 以及经由泵系统和连接到化学气相沉积室的排气管线从化学气相沉积室除去原硅酸四乙酯副产物，排气管线包括具有圆锥形状的网状过滤器。 本发明的另一方面涉及一种用于从化学气相沉积室除去原硅酸四乙酯副产物的排气系统，该排气系统包含连接到化学气相沉积室的排气管线，该排气管线包括经由泵系统具有锥形形状的网状过滤器; 以及与排气管连接以从处理室除去原硅酸四乙酯副产物的泵系统。
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公开(公告)号：US06221164B1
公开(公告)日：2001-04-24
申请号：US09491213
申请日：2000-01-25
IPC分类号： C23C1600
CPC分类号： C23C16/4412 , C23C16/4405 , C23C16/4407
摘要： In one embodiment, the present invention relates to a method of cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein involving contacting the low pressure chemical vapor deposition apparatus with a composition containing at least one lower alcohol. In another embodiment, the present invention relates to a system for cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein, containing a supply of a composition comprising at least one lower alcohol; an injection port for introducing the composition comprising at least one lower alcohol into the low pressure chemical vapor deposition apparatus; and a pump/vacuum system for removing crystallized TEOS material build-up from the low pressure chemical vapor deposition apparatus.
摘要翻译： 在一个实施方案中，本发明涉及清洗其中包含TEOS材料的低压化学气相沉积设备的方法，其中包括使低压化学气相沉积设备与含有至少一种低级醇的组合物接触。 在另一个实施方案中，本发明涉及用于清洗其中含有TEOS材料的低压化学气相沉积设备的系统，其中含有至少一种低级醇的组合物; 用于将包含至少一种低级醇的组合物引入低压化学气相沉积设备的注入口; 以及用于从低压化学气相沉积装置中除去结晶的TEOS材料积聚的泵/真空系统。
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公开(公告)号：US06498104B1
公开(公告)日：2002-12-24
申请号：US09776308
申请日：2001-02-02
IPC分类号： H01L21311
CPC分类号： C23C16/4412 , C23C16/4405 , C23C16/4407
摘要： In one embodiment, the present invention relates to a method of cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein involving contacting the low pressure chemical vapor deposition apparatus with a composition containing at least one lower alcohol. In another embodiment, the present invention relates to a system for cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein, containing a supply of a composition comprising at least one lower alcohol; an injection port for introducing the composition including at least one lower alcohol into the low pressure chemical vapor deposition apparatus; and a pump/vacuum system for removing crystallized TEOS material build-up from the low pressure chemical vapor deposition apparatus.
摘要翻译： 在一个实施方案中，本发明涉及清洗其中包含TEOS材料的低压化学气相沉积设备的方法，其中包括使低压化学气相沉积设备与含有至少一种低级醇的组合物接触。 在另一个实施方案中，本发明涉及用于清洗其中含有TEOS材料的低压化学气相沉积设备的系统，其中含有至少一种低级醇的组合物; 用于将包含至少一种低级醇的组合物引入低压化学气相沉积装置的注入口; 以及用于从低压化学气相沉积装置中除去结晶的TEOS材料积聚的泵/真空系统。
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