摘要:
Apparatuses, methods, and computer program products are disclosed for determining read thresholds for a non-volatile memory device. A method includes obtaining soft read data for a storage cell of a non-volatile storage medium. A method includes determining a read voltage threshold or other configuration parameter for a storage cell based on soft read data. A method includes using a determined read voltage threshold or other configuration parameter to read data from a storage cell.
摘要:
Apparatuses, systems, methods, and computer program products are provided for error correction. A soft read module is configured to obtain soft read information for a cell of a non-volatile memory medium. The soft read information may indicate a likelihood that a data value for the cell is correct. A reliability module is configured to associate the cell with a log-likelihood ratio (LLR) mapping from a plurality of LLR mappings based on one or more reliability characteristics for a set of cells that includes the cell. An LLR map module is configured to determine an LLR value based on the soft read information by using the LLR mapping.
摘要:
Apparatuses, systems, methods, and computer program products are disclosed for error correction. A soft read module is configured to obtain soft read information for a cell of a non-volatile memory medium. The soft read information may indicate a likelihood that a data value for the cell is correct. A reliability module is configured to associate the cell with a log-likelihood ratio (LLR) mapping from a plurality of LLR mappings based on one or more reliability characteristics for a set of cells that includes the cell. An LLR map module is configured to determine an LLR value based on the soft read information by using the LLR mapping.