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1.
公开(公告)号:US11356013B2
公开(公告)日:2022-06-07
申请号:US17174825
申请日:2021-02-12
发明人: Martin Geske , Hendrik Gloes , Varun Raghunath
摘要: A method of short-circuiting a faulty submodule for a voltage-source power converter is disclosed. The submodule is based on a full-bridge, asymmetric full-bridge or half-bridge circuit design having power semiconductor switches with anti-parallel freewheeling diodes and optionally non-controllable semiconductor valves. The method 36 includes identifying a faulty semiconductor device and determining a failure mode selected from a short-circuit failure mode and an open circuit failure mode. The method further includes selecting a minimum number of power semiconductor switches suitable to provide a bypass path through the submodule depending on the identified faulty semiconductor device and the determined failure mode and driving the selected power semiconductor switches by a modified driving voltage compared to normal operation to cause them to break down in order to provide a durable, stable, low impedance short-circuit path between the AC voltage terminals of the submodule. A power converter comprising a series connection of such submodules and supporting the method of short-circuiting a faulty submodule is also disclosed.
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2.
公开(公告)号:US20210249947A1
公开(公告)日:2021-08-12
申请号:US17174825
申请日:2021-02-12
发明人: Martin Geske , Hendrik Gloes , Varun Raghunath
摘要: A method (36) of short-circuiting a faulty submodule (12, 12′, 12″) for a voltage-source power converter (8) is disclosed. The submodule (12, 12′, 12″) is based on a full-bridge, asymmetric full-bridge or half-bridge circuit design having power semiconductor switches (T1-T4) with anti-parallel freewheeling diodes (D1-D4) and optionally non-controllable semiconductor valves (D1′-D4′). The method 36 includes identifying a faulty semiconductor device and determining a failure mode selected from a short-circuit failure mode and an open circuit failure mode. The method further includes selecting a minimum number of power semiconductor switches suitable to provide a bypass path through the submodule depending on the identified faulty semiconductor device and the determined failure mode and driving the selected power semiconductor switches by a modified driving voltage compared to normal operation to cause them to break down in order to provide a durable, stable, low impedance short-circuit path (37a-37d) between the AC voltage terminals (28, 29) of the submodule (12, 12′, 12″). A power converter (8) comprising a series connection of such submodules (12, 12′, 12″) and supporting the method (36) of short-circuiting a faulty submodule (12, 12′, 12″) is also disclosed.
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