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公开(公告)号：US2740044A
公开(公告)日：1956-03-27
申请号：US31684152
申请日：1952-10-25
Applicant: GEN ELECTRIC
Inventor： STORM HERBERT F
IPC: B23K11/24
CPC classification number: B23K11/248
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2.发明授权
公开(公告)号：US3348128A
公开(公告)日：1967-10-17
申请号：US37837864
申请日：1964-06-26
Applicant: GEN ELECTRIC
Inventor： STORM HERBERT F
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3.发明授权
公开(公告)号：US3609476A
公开(公告)日：1971-09-28
申请号：US3609476D
申请日：1970-06-26
Applicant: GEN ELECTRIC
Inventor： STORM HERBERT F
IPC: H01L29/00 , H01L29/423 , H01L29/744 , H01L5/00 , H01L11/00
CPC classification number: H01L29/744 , H01L29/00 , H01L29/42304 , H01L29/42308
Abstract: An interdigitated emitter-base (or emitter-gate) layer structure is formed in the shape of an involute on a circular wafer. Because of greater wafer utilization, higher power ratings in semiconductor devices are realized. The contours of the involuteshaped interdigitated emitter and base contact elements are identical, simplifying mask preparation, and assuring simultaneous turnoff of the entire junction area in a gate turnoff thyristor, and simultaneous turn on in a transistor.
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公开(公告)号：US2958044A
公开(公告)日：1960-10-25
申请号：US40296954
申请日：1954-01-08
Applicant: GEN ELECTRIC
Inventor： STORM HERBERT F , LIVINGSTON ORRIN W
IPC: B23K11/24
CPC classification number: B23K11/248
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5.发明授权Insulated gate field effect transistor used as a voltage-controlled linear resistor 失效用作电压控制线性电阻器的绝缘栅场效应晶体管
公开(公告)号：US3577019A
公开(公告)日：1971-05-04
申请号：US3577019D
申请日：1968-09-24
Applicant: GEN ELECTRIC
Inventor： STORM HERBERT F
CPC classification number: H03G1/007
Abstract: The channel resistance of a metal-oxide-semiconductor fieldeffect transistor, or other insulated gate field effect transistor, is linearized by applying to the gate electrode, in addition to the gate voltage for controlling the conductivity, an external feedback voltage having a value of one-half the supply voltage to nullify the effect of the internal feedback due to the supply voltage. In some cases the base electrode is disconnected, but spurious effects caused thereby can be avoided. The voltagecontrolled linear resistor can be employed in DC and AC circuits in applications such as an AC phase shift circuit.
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Patent Agency Ranking6.发明授权Silicon controlled gate turn off switch circuit with load connected to interior junction 失效硅控制栅极关断开关电路，负载连接到内部结
公开(公告)号：US3243602A
公开(公告)日：1966-03-29
申请号：US24441262
申请日：1962-12-13
Applicant: GEN ELECTRIC
Inventor： STORM HERBERT F
IPC: H01L29/744 , H02M7/515 , H03K17/73
CPC classification number: H01L29/744 , H02M7/515 , H03K17/73
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公开(公告)号：US2724797A
公开(公告)日：1955-11-22
申请号：US20889451
申请日：1951-02-01
Applicant: GEN ELECTRIC
Inventor： STORM HERBERT F
IPC: H02P9/32
CPC classification number: H02P9/32
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公开(公告)号：US2532825A
公开(公告)日：1950-12-05
申请号：US10596749
申请日：1949-07-21
Applicant: GEN ELECTRIC
Inventor： STORM HERBERT F
IPC: B23K11/24
CPC classification number: B23K11/248
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公开(公告)号：US2529198A
公开(公告)日：1950-11-07
申请号：US7555749
申请日：1949-02-10
Applicant: GEN ELECTRIC
Inventor： STORM HERBERT F
CPC classification number: B23Q3/1543 , B23Q3/15
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公开(公告)号：US2451887A
公开(公告)日：1948-10-19
申请号：US71116446
申请日：1946-11-20
Applicant: GEN ELECTRIC
Inventor： STORM HERBERT F , HUTTON ERNEST W
IPC: H04L27/04
CPC classification number: H04L27/04
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