公开(公告)号：US20040018137A1

公开(公告)日：2004-01-29

申请号：US10262784

申请日：2002-10-02

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Yue Meng

IPC: C01B031/06

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  B01J2203/0695

Abstract: A method for synthesizing boron doped diamond for improving the oxidation resistance of said diamond crystals includes forming a fully dense core (mixture) of graphite, catalyst/solvent metals, optional diamond seed crystals, and a source of boron. This mixture is subjected to diamond-formed high pressure/high temperature (HP/HT) conditions for a time adequate for forming diamond. The thus-formed diamond product is recovered to contain boron substituted into the diamond structure. The fully dense core is substantially devoid of air/nitrogen (N) content. In one embodiment, the boron amorphous B.

Abstract translation: 用于合成硼掺杂金刚石以提高所述金刚石晶体的抗氧化性的方法包括形成石墨，催化剂/溶剂金属，任选的金刚石晶种和硼源的完全致密的核心（混合物）。 将该混合物经受金刚石形成的高压/高温（HP / HT）条件一段足以形成金刚石的时间。 回收如此形成的金刚石产品以含有被取代成金刚石结构的硼。 完全致密的核基本上没有空气/氮（N）含量。 在一个实施方案中，硼无定形B.