POLYCRYSTALLINE DIAMOND AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    POLYCRYSTALLINE DIAMOND AND MANUFACTURING METHOD THEREOF 有权
    多晶金刚石及其制造方法

    公开(公告)号:US20160229696A1

    公开(公告)日:2016-08-11

    申请号:US15131971

    申请日:2016-04-18

    IPC分类号: C01B31/06

    摘要: Nano polycrystalline diamond is composed of carbon and a plurality of impurities other than carbon. A concentration of each of the plurality of impurities is not higher than 0.01 mass %, and the nano polycrystalline diamond has a crystal grain size (a maximum length) not greater than 500 nm. The nano polycrystalline diamond can be fabricated by preparing graphite in which a concentration of an impurity is not higher than 0.01 mass % and converting graphite to diamond by applying an ultra-high pressure and a high temperature to graphite.

    摘要翻译: 纳米多晶金刚石由碳和除碳以外的多种杂质组成。 多个杂质的浓度不高于0.01质量%,纳米多晶金刚石的结晶粒径(最大长度)不大于500nm。 可以通过制备其中杂质浓度不高于0.01质量%的石墨并通过对石墨施加超高压和高温将石墨转化为金刚石来制造纳米多晶金刚石。

    Method of cladding diamond seeds
    9.
    发明授权
    Method of cladding diamond seeds 有权
    包覆金刚石种子的方法

    公开(公告)号:US09044726B2

    公开(公告)日:2015-06-02

    申请号:US11916148

    申请日:2006-05-26

    摘要: The invention relates to a method for manufacture of diamond, the method including the steps of providing a first coating of solvent metal or solvent metal alloy on a diamond seed to create a coated diamond seed, situating the coated diamond seed adjacent a catalyst system comprising a solvent metal and/or a source of carbon, and subjecting the coated diamond seed and catalyst system to increased temperature wherein the melting point of the first coating is at least 20 deg C. below that of the catalyst system. The invention further relates to a compact comprising a plurality of diamond seeds wherein at least one seed includes a first coating comprising a solvent metal and/or solvent metal based alloy, the compact further comprising a catalyst system comprising a solvent metal and/or a source of carbon wherein the melting point of the first coating is at least 20 deg C. below that of the catalyst system.

    摘要翻译: 本发明涉及一种用于制造金刚石的方法,该方法包括以下步骤:在金刚石种子上提供溶剂金属或溶剂金属合金的第一涂层以产生涂覆的金刚石晶种,将涂覆的金刚石晶粒定位在催化剂体系附近,该催化剂体系包含 溶剂金属和/或碳源,并且使经涂覆的金刚石晶种和催化剂体系升温,其中第一涂层的熔点低于催化剂体系的熔点至少20℃。 本发明还涉及包含多个金刚石种子的压块,其中至少一种种子包括包含溶剂金属和/或溶剂金属基合金的第一涂层,所述压块还包括包含溶剂金属和/或源的催化剂体系 的碳,其中第一涂层的熔点低于催化剂体系的熔点至少20℃。