公开(公告)号：US09123772B2

公开(公告)日：2015-09-01

申请号：US14044533

申请日：2013-10-02

Applicant: GLOBALFOUNDARIES Inc

Inventor： Xusheng Wu ,  Wanxun He ,  Hongliang Shen

IPC: H01L21/00 ,  H01L21/762 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L27/0886 ,  H01L21/0217 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/76224 ,  H01L21/823431 ,  H01L29/0653 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

Abstract: Embodiments of the present invention provide an improved method for fabrication of fin field effect transistors (finFETs). Sacrificial regions are formed on a semiconductor substrate. Spacers are formed adjacent to two sides of the sacrificial regions. Fins are formed based on the spacers. One set of spacers is treated as dummy spacers, and is removed prior to fin formation, leaving the other set of spacers to be used for forming fins on the final semiconductor structure. All the fins on the final semiconductor structure are formed from spacers on one side of the sacrificial material. This reduces variation in width of the fins.

Abstract translation: 本发明的实施例提供了一种用于制造鳍式场效应晶体管（finFET）的改进方法。 牺牲区域形成在半导体衬底上。 间隔件邻近牺牲区域的两侧形成。 翅片基于间隔件形成。 将一组间隔物作为假间隔物处理，并且在翅片形成之前被除去，留下用于在最终半导体结构上形成翅片的另一组间隔件。 最终半导体结构上的所有鳍都由牺牲材料的一侧上的间隔物形成。 这减少了散热片的宽度变化。