公开(公告)号：US20140197498A1

公开(公告)日：2014-07-17

申请号：US13740974

申请日：2013-01-14

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Jan Hoentschel ,  Stefan Flachowsky ,  Nicolas Sasiat ,  Ran Yan

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/665 ,  H01L21/823443 ,  H01L21/823468 ,  H01L29/518 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/78

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided herein. In an embodiment, a method for fabricating an integrated circuit includes forming over a semiconductor substrate a gate structure. The method further includes depositing a non-conformal spacer material around the gate structure. A protection mask is formed over the non-conformal spacer material. The method etches the non-conformal spacer material and protection mask to form a salicidation spacer. Further, a self-aligned silicide contact is formed adjacent the salicidation spacer.

Abstract translation: 本文提供用于制造集成电路的集成电路和方法。 在一个实施例中，制造集成电路的方法包括在半导体衬底上形成栅极结构。 该方法还包括在栅极结构周围沉积非共形间隔物材料。 在非保形间隔物材料上形成保护罩。 该方法蚀刻非共形间隔物材料和保护掩模以形成防腐隔离物。 此外，邻近该盐化隔离层形成自对准的硅化物接触。