公开(公告)号：US09040380B2

公开(公告)日：2015-05-26

申请号：US14023558

申请日：2013-09-11

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Xiang Hu ,  Jin Ping Liu ,  Jill Hildreth ,  Taejoon Han

IPC: H01L21/336 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/823431 ,  H01L21/845

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a fin structure overlying a semiconductor substrate. The fin structure defines a fin axis extending in a longitudinal direction perpendicular to a lateral direction and has two fin sidewalls parallel to the fin axis. The method includes forming gate structures overlying the fin structure and transverse to the fin axis. Further, the method includes growing an epitaxial material on the fin structure and confining growth of the epitaxial material in the lateral direction.

Abstract translation: 提供了用于制造集成电路的集成电路和方法。 在一个实施例中，一种用于制造集成电路的方法包括提供覆盖半导体衬底的翅片结构。 翅片结构限定了在垂直于横向方向的纵向方向上延伸的翅片轴线，并且具有平行于翅片轴线的两个翅片侧壁。 该方法包括形成覆盖翅片结构并横向于翅片轴线的栅极结构。 此外，该方法包括在翅片结构上生长外延材料并限制外延材料在横向上的生长。

公开(公告)号：US20150069515A1

公开(公告)日：2015-03-12

申请号：US14023558

申请日：2013-09-11

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Xiang Hu ,  Jin Ping Liu ,  Jill Hildreth ,  Taejoon Han

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/823431 ,  H01L21/845

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a fin structure overlying a semiconductor substrate. The fin structure defines a fin axis extending in a longitudinal direction perpendicular to a lateral direction and has two fin sidewalls parallel to the fin axis. The method includes forming gate structures overlying the fin structure and transverse to the fin axis. Further, the method includes growing an epitaxial material on the fin structure and confining growth of the epitaxial material in the lateral direction.

Abstract translation: 提供了用于制造集成电路的集成电路和方法。 在一个实施例中，一种用于制造集成电路的方法包括提供覆盖半导体衬底的翅片结构。 翅片结构限定了在垂直于横向方向的纵向方向上延伸的翅片轴线，并且具有平行于翅片轴线的两个翅片侧壁。 该方法包括形成覆盖翅片结构并横向于翅片轴线的栅极结构。 此外，该方法包括在翅片结构上生长外延材料并限制外延材料在横向上的生长。