公开(公告)号：US09153693B2

公开(公告)日：2015-10-06

申请号：US13917019

申请日：2013-06-13

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Hong Yu ,  Wang Zheng ,  Huang Liu ,  Yongsik Moon

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/28 ,  H01L29/49

CPC classification number: H01L29/785 ,  H01L21/28008 ,  H01L29/495 ,  H01L29/66545 ,  H01L29/66795

Abstract: An intermediate semiconductor structure of a FinFET device in fabrication includes a substrate, a plurality of fin structures coupled to the substrate and a dummy gate disposed perpendicularly over the fin structures. A portion of the dummy gate is removed between the fin structures to create one or more vias and the one or more vias are filled with a dielectric. The dummy gate is then replaced with a metal gate formed around the dielectric-filled vias.

Abstract translation: 在制造中的FinFET器件的中间半导体结构包括衬底，耦合到衬底的多个翅片结构和垂直于翅片结构设置的虚拟栅极。 在翅片结构之间去除虚拟栅极的一部分以产生一个或多个通孔，并且一个或多个通孔用电介质填充。 然后用在电介质填充的通孔周围形成的金属栅极替换虚拟栅极。