公开(公告)号：US08828839B2

公开(公告)日：2014-09-09

申请号：US13753269

申请日：2013-01-29

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： David P. Brunco ,  Witold Maszara

IPC: H01L21/00 ,  H01L21/762

CPC classification number: H01L21/762 ,  H01L21/0337 ,  H01L21/31144 ,  H01L29/66795 ,  Y10S438/942 ,  Y10S438/947

Abstract: Fabrication methods for semiconductor device structures are provided. In an exemplary embodiment, a method of fabricating an electrically-isolated FinFET semiconductor device includes the steps of forming a silicon oxide layer over a semiconductor substrate including a silicon material and forming a first hard mask layer over the silicon oxide layer. The method further includes the steps of forming a first plurality of void spaces in the first hard mask layer and forming a second hard mask layer in the first plurality of void spaces. Still further, the method includes the steps of removing the remaining portions of the first hard mask layer, thereby forming a second plurality of void spaces in the second hard mask layer, extending the second plurality of void spaces into the silicon oxide layer, and forming a plurality of fin structures in the extended second plurality of void spaces.

Abstract translation: 提供半导体器件结构的制造方法。 在示例性实施例中，制造电隔离FinFET半导体器件的方法包括以下步骤：在包括硅材料的半导体衬底上形成氧化硅层，并在氧化硅层上形成第一硬掩模层。 该方法还包括在第一硬掩模层中形成第一多个空隙空间并在第一多个空隙空间中形成第二硬掩模层的步骤。 此外，该方法包括以下步骤：去除第一硬掩模层的剩余部分，从而在第二硬掩模层中形成第二多个空隙，将第二多个空隙空间延伸到氧化硅层中，并形成 在延伸的第二多个空隙空间中的多个翅片结构。