公开(公告)号：US20200058757A1

公开(公告)日：2020-02-20

申请号：US16105102

申请日：2018-08-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruilong XIE ,  Chanro PARK ,  Julien FROUGIER ,  Kangguo CHENG ,  Andre P. LABONTE

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/417 ,  H01L21/8234 ,  H01L29/45 ,  H01L21/768 ,  H01L27/088 ,  H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  H01L21/265 ,  H01L21/285

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to contact structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and drain regions and sidewall spacers; contacts connecting to at least one gate structure of the plurality of gate structures; and at least one metallization feature connecting to the source and drain regions and extending over the sidewall spacers.