公开(公告)号：US09960118B2

公开(公告)日：2018-05-01

申请号：US15001956

申请日：2016-01-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Donghun Kang ,  Neal A. Makela ,  Christopher C. Parks

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53266 ,  H01L21/76846

Abstract: An opening is formed within a substrate made of a silicon material, and a cleaning process is performed; after which, the bottom and walls of the opening are contaminated with oxygen and fluorine particles. A lower blocking layer is formed within the opening, and the lower blocking layer contacts the bottom and walls of the opening. Also, a middle liner layer is formed within the opening, and the middle liner layer contacts the lower blocking layer. Additionally, an upper blocking layer is formed within the opening, and the upper blocking layer contacts the middle liner layer. Further, a conductor layer is formed within the opening, and the conductor layer contacts the upper blocking layer. The lower blocking layer prevents the fluorine particles from affecting the other layers.

公开(公告)号：US20180182711A1

公开(公告)日：2018-06-28

申请号：US15901979

申请日：2018-02-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Donghun Kang ,  Neal A. Makela ,  Christopher C. Parks

IPC: H01L23/532 ,  H01L21/768

Abstract: An opening is formed within a substrate made of a silicon material, and a cleaning process is performed; after which, the bottom and walls of the opening are contaminated with oxygen and fluorine particles. A lower blocking layer is formed within the opening, and the lower blocking layer contacts the bottom and walls of the opening. Also, a middle liner layer is formed within the opening, and the middle liner layer contacts the lower blocking layer. Additionally, an upper blocking layer is formed within the opening, and the upper blocking layer contacts the middle liner layer. Further, a conductor layer is formed within the opening, and the conductor layer contacts the upper blocking layer. The lower blocking layer prevents the fluorine particles from affecting the other layers.

公开(公告)号：US20170207175A1

公开(公告)日：2017-07-20

申请号：US15001956

申请日：2016-01-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Donghun Kang ,  Neal A. Makela ,  Christopher C. Parks

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53266 ,  H01L21/76846

Abstract: An opening is formed within a substrate made of a silicon material, and a cleaning process is performed; after which, the bottom and walls of the opening are contaminated with oxygen and fluorine particles. A lower blocking layer is formed within the opening, and the lower blocking layer contacts the bottom and walls of the opening. Also, a middle liner layer is formed within the opening, and the middle liner layer contacts the lower blocking layer. Additionally, an upper blocking layer is formed within the opening, and the upper blocking layer contacts the middle liner layer. Further, a conductor layer is formed within the opening, and the conductor layer contacts the upper blocking layer. The lower blocking layer prevents the fluorine particles from affecting the other layers.

公开(公告)号：US10483205B2

公开(公告)日：2019-11-19

申请号：US15901979

申请日：2018-02-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Donghun Kang ,  Neal A. Makela ,  Christopher C. Parks

IPC: H01L21/768 ,  H01L23/532

Abstract: An opening is formed within a substrate made of a silicon material, and a cleaning process is performed; after which, the bottom and walls of the opening are contaminated with oxygen and fluorine particles. A lower blocking layer is formed within the opening, and the lower blocking layer contacts the bottom and walls of the opening. Also, a middle liner layer is formed within the opening, and the middle liner layer contacts the lower blocking layer. Additionally, an upper blocking layer is formed within the opening, and the upper blocking layer contacts the middle liner layer. Further, a conductor layer is formed within the opening, and the conductor layer contacts the upper blocking layer. The lower blocking layer prevents the fluorine particles from affecting the other layers.