公开(公告)号：US20180026118A1

公开(公告)日：2018-01-25

申请号：US15174147

申请日：2016-07-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Nicolas L. Breil ,  Neal A. Makela ,  Praneet Adusumilli ,  Domingo A. Ferrer

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L21/285 ,  H01L29/04 ,  H01L29/08

CPC classification number: H01L29/66795 ,  H01L21/2855 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/785 ,  H01L2029/7858

Abstract: During a physical vapor deposition (PVD) process, the ion energy of a depositing species is controlled. By varying the ion energy throughout the process, the degree of conformality of the deposited layer over three-dimensional structures, including the extent to which the deposited layer merges between adjacent structures can be controlled.

公开(公告)号：US10483205B2

公开(公告)日：2019-11-19

申请号：US15901979

申请日：2018-02-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Donghun Kang ,  Neal A. Makela ,  Christopher C. Parks

IPC: H01L21/768 ,  H01L23/532

Abstract: An opening is formed within a substrate made of a silicon material, and a cleaning process is performed; after which, the bottom and walls of the opening are contaminated with oxygen and fluorine particles. A lower blocking layer is formed within the opening, and the lower blocking layer contacts the bottom and walls of the opening. Also, a middle liner layer is formed within the opening, and the middle liner layer contacts the lower blocking layer. Additionally, an upper blocking layer is formed within the opening, and the upper blocking layer contacts the middle liner layer. Further, a conductor layer is formed within the opening, and the conductor layer contacts the upper blocking layer. The lower blocking layer prevents the fluorine particles from affecting the other layers.

公开(公告)号：US10014180B1

公开(公告)日：2018-07-03

申请号：US15681654

申请日：2017-08-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Neal A. Makela ,  Vimal K. Kamineni ,  Pei Liu ,  Chih-Chiang Chang

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/423

CPC classification number: H01L21/28568 ,  H01L21/0217 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/31055 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66568 ,  H01L2029/42388

Abstract: A structure and method for forming a tungsten region for a replacement metal gate (RMG). The method for forming the tungsten region may include, among other things, forming a first tungsten region i.e., tungsten seed layer, on a liner in a trench of a dielectric layer; removing a portion of the liner and the tungsten seed layer to expose an uppermost surface of a work function metal (WFM) layer wherein an uppermost surface of the liner and tungsten seed layer is positioned below an uppermost surface of the dielectric layer; and forming a second tungsten region from the tungsten seed layer. The tungsten region may be formed to contact the uppermost surface liner, the uppermost surface of WFM layer, and/or the sidewalls of the trench. The tungsten region may include a single crystallographic orientation. The tungsten region may also include an uppermost surface with a substantially arcuate cross-sectional geometry.

公开(公告)号：US09960118B2

公开(公告)日：2018-05-01

申请号：US15001956

申请日：2016-01-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Donghun Kang ,  Neal A. Makela ,  Christopher C. Parks

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53266 ,  H01L21/76846

Abstract: An opening is formed within a substrate made of a silicon material, and a cleaning process is performed; after which, the bottom and walls of the opening are contaminated with oxygen and fluorine particles. A lower blocking layer is formed within the opening, and the lower blocking layer contacts the bottom and walls of the opening. Also, a middle liner layer is formed within the opening, and the middle liner layer contacts the lower blocking layer. Additionally, an upper blocking layer is formed within the opening, and the upper blocking layer contacts the middle liner layer. Further, a conductor layer is formed within the opening, and the conductor layer contacts the upper blocking layer. The lower blocking layer prevents the fluorine particles from affecting the other layers.

公开(公告)号：US20180182711A1

公开(公告)日：2018-06-28

申请号：US15901979

申请日：2018-02-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Donghun Kang ,  Neal A. Makela ,  Christopher C. Parks

IPC: H01L23/532 ,  H01L21/768

Abstract: An opening is formed within a substrate made of a silicon material, and a cleaning process is performed; after which, the bottom and walls of the opening are contaminated with oxygen and fluorine particles. A lower blocking layer is formed within the opening, and the lower blocking layer contacts the bottom and walls of the opening. Also, a middle liner layer is formed within the opening, and the middle liner layer contacts the lower blocking layer. Additionally, an upper blocking layer is formed within the opening, and the upper blocking layer contacts the middle liner layer. Further, a conductor layer is formed within the opening, and the conductor layer contacts the upper blocking layer. The lower blocking layer prevents the fluorine particles from affecting the other layers.

公开(公告)号：US09859403B1

公开(公告)日：2018-01-02

申请号：US15174147

申请日：2016-07-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Nicolas L. Breil ,  Neal A. Makela ,  Praneet Adusumilli ,  Domingo A. Ferrer

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/04 ,  H01L29/08 ,  H01L21/285 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/2855 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/785 ,  H01L2029/7858

Abstract: During a physical vapor deposition (PVD) process, the ion energy of a depositing species is controlled. By varying the ion energy throughout the process, the degree of conformality of the deposited layer over three-dimensional structures, including the extent to which the deposited layer merges between adjacent structures can be controlled.

公开(公告)号：US20170207175A1

公开(公告)日：2017-07-20

申请号：US15001956

申请日：2016-01-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Donghun Kang ,  Neal A. Makela ,  Christopher C. Parks

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53266 ,  H01L21/76846

Abstract: An opening is formed within a substrate made of a silicon material, and a cleaning process is performed; after which, the bottom and walls of the opening are contaminated with oxygen and fluorine particles. A lower blocking layer is formed within the opening, and the lower blocking layer contacts the bottom and walls of the opening. Also, a middle liner layer is formed within the opening, and the middle liner layer contacts the lower blocking layer. Additionally, an upper blocking layer is formed within the opening, and the upper blocking layer contacts the middle liner layer. Further, a conductor layer is formed within the opening, and the conductor layer contacts the upper blocking layer. The lower blocking layer prevents the fluorine particles from affecting the other layers.