公开(公告)号：US20200058515A1

公开(公告)日：2020-02-20

申请号：US16662091

申请日：2019-10-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Heng YANG ,  David C. PRITCHARD ,  George J. KLUTH ,  Anurag MITTAL ,  Hongru REN ,  Manjunatha G. PRABHU ,  Kai SUN ,  Neha NAYYAR ,  Lixia LEI

IPC: H01L21/308 ,  H01L27/12 ,  H01L29/66 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the diffusion region; removing the mandrel to form multiple spacers each having a thickness; depositing a second material over the spacers and the diffusion material; and forming slots in the diffusion region by removing a portion of the second material over the diffusion region and the underlying diffusion material.

公开(公告)号：US20190012422A1

公开(公告)日：2019-01-10

申请号：US15644288

申请日：2017-07-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Neha NAYYAR ,  Daniel J. DECHENE ,  David C. PRITCHARD ,  George J. KLUTH

IPC: G06F17/50 ,  H01L23/522

Abstract: The present disclosure relates to methodologies for designing semiconductor structures, and, more particularly, creating a methodology to connect contacts of semiconductor elements to a metal line using marker tabs to reserve space for future connections between the contacts and the metal line, and then reassigning the marker tabs to connections between the contacts and the metal line on different levels of a metal stack formed over the semiconductor elements.