公开(公告)号：US20190113837A1

公开(公告)日：2019-04-18

申请号：US15730830

申请日：2017-10-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Feng WANG ,  Hongxin ZHANG ,  Shaowen GAO ,  Norman CHEN

IPC: G03F1/36

CPC classification number: G03F1/36

Abstract: A method of creating an optical proximity correction (OPC) model and assessing the model through optical rule checking (ORC) includes the introduction of post-integration, i.e., post-metallization data. High density critical dimension scanning electron microscopy and backscattered electron scanning electron microscopy from a metallized structure are used during development and verification of the model to accurately predict post-integration behavior.