Curvilinear mask models
    1.
    发明授权

    公开(公告)号:US10831977B1

    公开(公告)日:2020-11-10

    申请号:US16429536

    申请日:2019-06-03

    Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to curvilinear mask models and methods of manufacture. The method includes: calibrating, by a computing device, machine learning models for silicon photonics applications; retargeting, by the computing device, designs in a layout for the silicon photonics applications by applying the machine learning models to the designs; and repairing, by the computing device, unmatching shapes in the retargeted designs to generate final curvilinear mask shapes for the silicon photonics application.

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