公开(公告)号：US20170330933A1

公开(公告)日：2017-11-16

申请号：US15622549

申请日：2017-06-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Richard A. Phelps ,  James A. Slinkman

IPC: H01L29/06 ,  H01L21/764

CPC classification number: H01L21/764

Abstract: Semiconductor structures formed using a substrate that has a porous semiconductor layer and a device layer on the porous semiconductor layer. One or more trench isolation regions are formed in the device layer that surround an active device region. An opening is formed that extends through the one or more trench isolation regions to the porous semiconductor layer. A removal agent is directed through the opening to remove the porous semiconductor layer from a volume beneath the active device region and thereby form an air gap vertically beneath the active device region.

公开(公告)号：US09755015B1

公开(公告)日：2017-09-05

申请号：US15150977

申请日：2016-05-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Richard A. Phelps ,  James A. Slinkman

IPC: H01L21/70 ,  H01L29/06 ,  H01L21/764

CPC classification number: H01L21/764

Abstract: Semiconductor structures formed using a substrate that has a porous semiconductor layer and a device layer on the porous semiconductor layer. One or more trench isolation regions are formed in the device layer that surround an active device region. An opening is formed that extends through the one or more trench isolation regions to the porous semiconductor layer. A removal agent is directed through the opening to remove the porous semiconductor layer from a volume beneath the active device region and thereby form an air gap vertically beneath the active device region.