公开(公告)号：US20200185266A1

公开(公告)日：2020-06-11

申请号：US16213189

申请日：2018-12-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui ZANG ,  Ruilong XIE ,  Jessica M. DECHENE

IPC: H01L21/762 ,  H01L21/308 ,  H01L27/088 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to single diffusion cut for gate structures and methods of manufacture. The structure includes a single diffusion break extending into a substrate between diffusion regions of adjacent gate structures, the single diffusion break filled with an insulator material and further comprising an undercut region lined with a liner material which is between the insulator material and the diffusion regions.