公开(公告)号：US20180190588A1

公开(公告)日：2018-07-05

申请号：US15399200

申请日：2017-01-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xuelian ZHU ,  Jia ZENG ,  Wenhui WANG ,  Youngtag WOO ,  Jongwook KYE

IPC: H01L23/535 ,  H01L29/417 ,  H01L21/768 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L23/535 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/0642 ,  H01L29/4175 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to contacts for local connections and methods of manufacture. The structure includes: at least one contact electrically shorted to a gate structure and a source/drain contact and located below a first wiring layer; and gate, source and drain contacts extending from selected gate structures and electrically connecting to the first wiring layer.