Void monitoring device for measurement of wafer temperature variations
    1.
    发明授权
    Void monitoring device for measurement of wafer temperature variations 有权
    用于测量晶片温度变化的空隙监测装置

    公开(公告)号:US09543219B2

    公开(公告)日:2017-01-10

    申请号:US14557819

    申请日:2014-12-02

    Abstract: A method of monitoring a temperature of a plurality of regions in a substrate during a deposition process, the monitoring of the temperature including: forming, in the monitored plurality of regions, a plurality of metal structures each with a different metal pattern density, where each metal pattern density corresponds to a threshold temperature at or above which metal voids and surface roughness are formed in the plurality of metal structures, and detecting metal voids and surface roughness in the plurality of metal structures to determine the temperature of the monitored plurality of regions.

    Abstract translation: 一种在沉积过程中监测衬底中的多个区域的温度的方法,所述温度的监测包括:在所监视的多个区域中形成多个金属结构,每个金属结构具有不同的金属图案密度,其中每个 金属图案密度对应于多个金属结构中形成金属空隙和表面粗糙度的阈值温度,并且检测多个金属结构中的金属空隙和表面粗糙度,以确定被监测的多个区域的温度。

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