公开(公告)号：US09520391B1

公开(公告)日：2016-12-13

申请号：US14996371

申请日：2016-01-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brent A. Anderson ,  Terence B. Hook ,  Myung-Hee Na ,  Edward J. Nowak

IPC: H01L27/06 ,  H01L29/786 ,  H01L21/8238

CPC classification number: H01L27/0629 ,  H01L21/823857 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/78648

Abstract: Methods form complementary metal oxide semiconductor (CMOS) devices that include a first transistor and a complementary second transistor, and an output connected to the first transistor and the second transistor. The first transistor includes a first channel region, a first back gate, a first delay element between the output and the first back gate, and a first back gate insulator separating the first back gate from the first channel region. The second transistor includes a second channel region, a second back gate, a second delay element between the output and the second back gate, and a second back gate insulator separating the second back gate from the second channel region. The first delay element, the first back gate insulator, and the first channel region form a first resistor-capacitor (RC) circuit, and the second delay element, the second back gate insulator, and the second channel region form a second RC circuit.

Abstract translation: 方法形成包括第一晶体管和互补第二晶体管的互补金属氧化物半导体（CMOS）器件，以及连接到第一晶体管和第二晶体管的输出。 第一晶体管包括第一沟道区，第一后栅，在输出和第一后栅之间的第一延迟元件，以及将第一后栅与第一沟道区分开的第一后栅绝缘体。 第二晶体管包括第二沟道区，第二后栅，输出与第二后栅之间的第二延迟元件，以及将第二栅极与第二沟道区分开的第二栅极绝缘体。 第一延迟元件，第一背栅绝缘体和第一沟道区形成第一电阻 - 电容（RC）电路，第二延迟元件，第二后栅极绝缘体和第二沟道区形成第二RC电路。