公开(公告)号：US09825172B2

公开(公告)日：2017-11-21

申请号：US14457545

申请日：2014-08-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Edward J. Nowak ,  Richard Q. Williams

IPC: H01L29/78 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/823431 ,  H01L29/66795 ,  H01L29/66818

Abstract: The disclosure relates generally to a metal-oxide-semiconductor field effect transistor (MOSFET) structures and methods of forming the same. The MOSFET structure includes at least one semiconductor body on a substrate; a dielectric cap on a top surface of the at least one semiconductor body, wherein a width of the at least one semiconductor body is less than a width of the dielectric cap; a gate dielectric layer conformally coating the at least one semiconductor body; and at least one electrically conductive gate on the gate dielectric layer.