公开(公告)号：US20200321332A1

公开(公告)日：2020-10-08

申请号：US16376234

申请日：2019-04-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Abu Naser M. Zainuddin ,  Christopher D. Sheraw ,  Sangameshwar Rao Saudari ,  Wei Ma ,  Kai Zhao ,  Bala S. Haran

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L21/3065

Abstract: A method includes forming a first region including a pair of first FinFETs and a second region including a pair of second FinFETs on a substrate. Each FinFET includes a metal gate having a first spacer adjacent thereto, and each first FinFET has a gate dielectric that is thicker than a gate dielectric of each second FinFET, such that the first FinFETs can be higher voltage input/output devices. The method forms a first contact between the metal gates of the pair of first FinFETs with a second spacer thereabout, the second spacer contacting a portion of each first spacer. The second spacer thus has a portion extending parallel to the metal gates, and a portion extending perpendicular to the metal gates. A second contact is formed between the metal gates of the pair of second FinFETs, and the second contact devoid of the second spacer.