公开(公告)号：US20170125403A1

公开(公告)日：2017-05-04

申请号：US15286196

申请日：2016-10-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Juhan Kim ,  Mahbub Rashed ,  Navneet Jain ,  Anurag Mittal ,  Sangmoon Kim

IPC: H01L27/06 ,  H01L29/66 ,  G06F17/50 ,  H01L27/11 ,  H01L27/02

CPC classification number: H01L27/0629 ,  G06F17/5072 ,  H01L27/0207 ,  H01L27/1104 ,  H01L27/1203 ,  H01L28/00 ,  H01L29/6609 ,  H01L29/8611

Abstract: At least one method, apparatus and system disclosed involves an antenna diode design for a semiconductor device. A first common diode operatively coupled to a ground node and to a p-well layer serving as an isolated p-well that is formed over a deep n-well that is adjacent to an n-well in a semiconductor device is provided. A first antenna diode formed on the isolated p-well operatively coupled to the p-well layer and operatively coupled to a first signal line of the semiconductor device is provided for discharging accumulated charges on the first signal line. A second antenna diode formed on the isolated p-well operatively coupled to the p-well layer and operatively coupled to a second signal line of semiconductor device is provided for discharging accumulated charges on the second signal line.

公开(公告)号：US10096595B2

公开(公告)日：2018-10-09

申请号：US15286196

申请日：2016-10-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Juhan Kim ,  Mahbub Rashed ,  Navneet Jain ,  Anurag Mittal ,  Sangmoon Kim

IPC: H01L27/02 ,  H01L27/06 ,  G06F17/50 ,  H01L27/11 ,  H01L29/66

Abstract: At least one method, apparatus and system disclosed involves an antenna diode design for a semiconductor device. A first common diode operatively coupled to a ground node and to a p-well layer serving as an isolated p-well that is formed over a deep n-well that is adjacent to an n-well in a semiconductor device is provided. A first antenna diode formed on the isolated p-well operatively coupled to the p-well layer and operatively coupled to a first signal line of the semiconductor device is provided for discharging accumulated charges on the first signal line. A second antenna diode formed on the isolated p-well operatively coupled to the p-well layer and operatively coupled to a second signal line of semiconductor device is provided for discharging accumulated charges on the second signal line.