公开(公告)号：US10395700B1

公开(公告)日：2019-08-27

申请号：US15926272

申请日：2018-03-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Venkatraghavan Bringivijayaraghavan ,  Sreenivasa Chaitanya Kumar Vavilla

IPC: G11C11/00 ,  G11C7/12 ,  G11C11/412 ,  G11C11/419

Abstract: Embodiments of the present disclosure provide a circuit structure including: first PMOS and second PMOS each including a gate, source, and drain; wherein sources of first and second PMOS are coupled to first voltage source, gate of first PMOS is cross coupled to drain of second PMOS, gate of second PMOS is cross coupled to drain of first PMOS, drain of the first PMOS is coupled to first bit-line node, and wherein drain of second PMOS is coupled to second bit-line node; write bit-switch having first NMOS coupled to first bit-line node and second NMOS coupled to second bit-line node, wherein first and second NMOS of write bit-switch are respectively coupled to a pair of data nodes each receiving one of a pair of data inputs; and write driver, having a pair of transistor stacks each coupled to between one of the pair of data nodes and ground.