公开(公告)号：US20180090516A1

公开(公告)日：2018-03-29

申请号：US15817362

申请日：2017-11-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yun Y. Wang ,  Oh-Jung Kwon ,  Stephen G. Fugardi ,  Sean M. Dillon

IPC: H01L27/12 ,  H01L49/02 ,  H01L21/285 ,  H01L27/108

CPC classification number: H01L27/1207 ,  H01L21/28512 ,  H01L27/10829 ,  H01L27/10861 ,  H01L28/60 ,  H01L28/75

Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.

公开(公告)号：US10192887B2

公开(公告)日：2019-01-29

申请号：US15817362

申请日：2017-11-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yun Y. Wang ,  Oh-Jung Kwon ,  Stephen G. Fugardi ,  Sean M. Dillon

IPC: H01L27/108 ,  H01L27/12 ,  H01L49/02 ,  H01L21/285

Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.

公开(公告)号：US09853055B2

公开(公告)日：2017-12-26

申请号：US15084807

申请日：2016-03-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yun Y. Wang ,  Oh-Jung Kwon ,  Stephen G. Fugardi ,  Sean M. Dillon

IPC: H01L27/12 ,  H01L49/02 ,  H01L27/108 ,  H01L21/285

CPC classification number: H01L27/1207 ,  H01L21/28512 ,  H01L27/10829 ,  H01L27/10861 ,  H01L28/60

Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.

公开(公告)号：US20170287942A1

公开(公告)日：2017-10-05

申请号：US15084807

申请日：2016-03-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yun Y. Wang ,  Oh-Jung Kwon ,  Stephen G. Fugardi ,  Sean M. Dillon

IPC: H01L27/12 ,  H01L27/108 ,  H01L21/285 ,  H01L49/02

CPC classification number: H01L27/1207 ,  H01L21/28512 ,  H01L27/10829 ,  H01L27/10861 ,  H01L28/60

Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.