公开(公告)号：US09305883B2

公开(公告)日：2016-04-05

申请号：US14620233

申请日：2015-02-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sebastian Naczas ,  Vamsi Paruchuri ,  Alexander Reznicek ,  Dominic J. Schepis

IPC: H01L29/66 ,  H01L23/535 ,  H01L29/78 ,  H01L29/45 ,  H01L29/417 ,  H01L29/06

CPC classification number: H01L23/535 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/66795 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A low resistance contact to a finFET source/drain can be achieved by forming a defect free surface on which to form such contact. The fins of a finFET can be exposed to epitaxial growth conditions to increase the bulk of semiconductive material in the source/drain. Facing growth fronts can merge or can form unmerged facets. A dielectric material can fill voids within the source drain region. A trench spaced from the finFET gate can expose the top portion of faceted epitaxial growth on fins within said trench, such top portions separated by a smooth dielectric surface. A silicon layer selectively formed on the top portions exposed within the trench can be converted to a semiconductor-metal layer, connecting such contact with individual fins in the source drain region.