公开(公告)号：US10552569B2

公开(公告)日：2020-02-04

申请号：US15868364

申请日：2018-01-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Christina Turley ,  Jed H. Rankin ,  Xuemei Chen ,  Allen H. Gabor ,  Timothy A. Brunner

IPC: G06F17/50 ,  G03F1/22 ,  G03F1/24 ,  G03F1/84

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to mask structures and methods of manufacture. The method includes determining a plane through a frontside surface and a backside surface of a mask, each plane representing a flatness of the frontside surface and the backside surface, respectively; subtracting, using at least one computing device, a difference between the plane of the frontside surface and the plane of the backside surface to find a thickness variation; generating, using the at least one computing device, a fitting to fit the thickness variation; and subtracting, using the at least one computing device, the fitting from the thickness variation to generate a residual structure for collecting a residual flatness measurement.