公开(公告)号：US20200279783A1

公开(公告)日：2020-09-03

申请号：US16288152

申请日：2019-02-28

Applicant: GLOBALFOUNDRIES INC. ,  NOVA MEASURING INSTRUMENTS LTD.

Inventor： PADRAIG TIMONEY ,  TAHER KAGALWALA ,  ALOK VAID ,  SRIDHAR MAHENDRAKAR ,  DHAIRYA DIXIT ,  SHAY YOGEV ,  MATTHEW SENDELBACH ,  CHARLES KANG

IPC: H01L21/66 ,  G01N21/956 ,  H01L29/66 ,  G01N21/95

Abstract: Process control during manufacture of semiconductor devices by collecting scatterometric spectra of a FinFET reference fin structure on a reference semiconductor wafer at a first checkpoint proximate to a first processing step during fabrication of the reference semiconductor wafer, collecting reference measurements of the reference fin structure at a second checkpoint proximate to a second processing step subsequent to the first checkpoint, and performing machine learning to identify correspondence between the scatterometric spectra and values based on the reference measurements and train a prediction model for producing a prediction value associated with a corresponding production fin structure of the FinFET on a production semiconductor wafer based on scatterometric spectra of the production fin structure collected at the corresponding first checkpoint during fabrication of the production semiconductor wafer.